Fujitsu Corporation

Fujitsu Semiconductor Limited

Hitachi, Ltd.

Fujitsu Microelectronics Limited

Yutaka Makino

Hirohisa Matsuki

Eiji Watanabe

Tetsuya Fujisawa

Masamitsu Ikumo

Mitsutaka Sato

Yoshitaka Aiba

Yoshito Akutagawa

Hiroyuki Matsui

Tamotsu Yamaura

Hiroyuki Yoda

Kenichi Hamada

Masanori Onodera

Koichi Murata

Kenichi Nagashige

Tadahiro Okamoto

Joji Fujimori

Masahiko Ishiguri

Kunio Kodama

Takaki Kurita

Kenichi Kado

Atsushi Matsuoka

Toshiharu Egami

Minoru Nakada

A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.

Process for producing semiconductor device and apparatus therefor

A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.

Method for manufacturing semiconductor device having electrode for external connection

A failure detection apparatus for a resolver outputting a sine signal indicative of sin &#x3b8; and a cosine signal indicative of cos &#x3b8; according to a rotational angle &#x3b8; of a rotator, includes an inspection value calculating section configured to calculate an inspection value based on at least one of the sine signal and the cosine signal; a failure detecting section configured to judge whether the resolver is in a failure state or not on the basis of the inspection value; a counting section configured to gradually increase a count value with a lapse of time when the failure detecting section is determining that the resolver is in the failure state, and configured to gradually decrease the count value with a lapse of time when the failure detecting section is determining that the resolver is not in the failure state; and a failure deciding section configured to finally decide that the resolver has caused the failure on the basis of the count value.

Failure detection apparatus for resolver

A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.

Forming method of electrode and manufacturing method of semiconductor device

When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al&#x2014;Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.

Semiconductor device having an electrode pad, a bump provided above the electrode pad and a bump foundation layer therebetween

A power steering apparatus includes an electric motor, a temperature sensor, and a control unit. The electric motor produces an assist steering effort in a steering system. The temperature sensor measures a temperature of a first portion subject to thermal influence of operation of the electric motor. The control unit determines an estimated temperature of a second portion in accordance with a value of a motor current, the second portion being subject to thermal influence of operation of the electric motor. The control unit determines a first upper limit value in accordance with the measured temperature; determines a second upper limit value in accordance with the estimated temperature; limit the motor current to a smaller one of the first and second upper limit values, when determining that the temperature sensor is normal; limit the motor current to the second upper limit value, when determining that the temperature sensor is abnormal.

Power steering apparatus

A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.

External connection terminal and semiconductor device

A method of manufacturing a semiconductor device is provided. The method includes the steps of forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate, removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed, removing the exposed part of the underlying metal film by using the wiring as a mask, forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring, forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.

Semiconductor device manufacturing method having a step of forming a post terminal on a wiring by electroless plating

A semiconductor device having a highly resistant metal film and a method of producing such a semiconductor device, which includes a metal film formed on an electrode pad, and a protection film formed in an area where he metal film does not exist. The metal film has a greater thickness on its peripheral end portion in contact with the protection film. The semiconductor device can be produced by a semiconductor production method including the steps of activating the surface o the electrode pad with a chelating solution containing glycine and a compound having a metallic element as nuclei, and forming a metal film by electroless metal plating.

Interconnection structure with film to increase adhesion of the bump

There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist layer coated on the base material layer, and for covering an upper surface of the cover film and inner surfaces of the openings in a situation that the resist layer is directed toward a semiconductor substrate side. Accordingly, it is possible to improve a throughput in a series of steps of grinding/polishing the semiconductor substrate and forming the bump electrodes which are required to thin the substrate of the semiconductor device.

Semiconductor device as an object of thickness reduction

A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

Growing community of inventors

Kawasaki, Japan

Yutaka Makino