Japan Science and Technology Agency

Kabushiki Kaisha Toshiba

Yutaka Majima

Toshiharu Teranishi

Koji Asakawa

Kenji Todori

Yoshihiko Nakano

Hideyuki Nishizawa

Toshiro Hiraoka

Shinji Murai

Shuzi Hayase

Yusuke Tanaka

Kazuhiko Matsumoto

Yasuhide Ohno

Kenzo Maehashi

Julian R Koe

Yasuo Azuma

Shinya Kano

Kenji Sano

Shigeru Machida

Shigeki Hattori

Eiichi Nakamura

Masayuki Sekimura

Taeko I Urano

Kyoko Nozaki

Akinori Hongu

Tomofumi Susaki

Ikuko Shimada

Hayato Tsuji

Ryo Shintani

Mingyue Yang

Ryo Toyama

YoonYoung Choi

Chun Ouyang

Yuma Ito

SeungJoo Lee

Guillaume Hackenberger

Kosuke Maeda

Eiki Aoyama

Daniel Eduardo Hurtado Salinas

Masanori Sakamoto

Guillaume Hubert Frederic Hackenberger

Kosuke Matsuzaki

Shuhei Takeshita

A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.

Heteroepitaxial structure and method for forming the same, and nanogap electrode

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a &#x3c0;-conjugated molecule having a &#x3c0;-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the &#x3c0;-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

Monomolecular transistor

A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodesincluding one electrodeA and the other electrodeB disposed so as to have a nanosize gap in between; a nanoparticleplaced between the nanogap electrodes; and a plurality of gate electrodes. At least one of the plurality of gate electrodesis used as a floating gate electrode to control the state of electric charge of the nanoparticle, which achieves a multivalued memory and rewritable logical operation.

Nanodevice

Art electrode pair enables the performance of a device to be accurately delivered, a method for manufacturing the same. An electrode pair, wherein one electrodeA and the other electrodeB are provided on the same plane so as to face each other with a gaptherebetween, and portions of the one electrodeA and the oilier electrodeB facing each other are respectively curved so as to get away from the plane along a direction nearing each other. This electrode pairis manufactured by preparing, as a sample, a substrate on which a pair of seed electrodes is formed with a space therebetween so as to have an initial gap, immersing the sample in an electroless plating solution, changing the electroless plating solution after a lapse of a certain period of time, and adjusting the number of times of changing.

Electrode pair, method for fabricating the same, substrate for device, and device

Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation elementis provided with an electrodeA and the other electrodeB that are provided to have a nanogap, a metal nanoparticlearranged between the electrodeA and the other electrodeB in insulated state, and a plurality of gate electrodesC,D,A,B for adjusting a charge of the metal nanoparticle. Electric current that flows between the electrodeA and the other electrodeB is controlled in accordance with the voltage applied to three or more of the gate electrodesC,D,A,B.

Logical operation element

Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrodeA and an other electrodeB arranged to have a nanogap therebetween; and halide ionprovided between the electrodesA andB; and on one of the electrodes.

Electronic element

An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.

Organic molecular memory

An organic molecular memory in an embodiment includes a first electrode having a first work function; a second electrode having a second work function; and an organic molecular layer provided between the first electrode and the second electrode, the organic molecular layer containing a first organic molecule chemically bonded to the first electrode, the first organic molecule having a resistance-change type molecular chain, and the first organic molecule having a first energy level higher than the first work function, and a second organic molecule chemically bonded to the second electrode and the second organic molecule having a second energy level higher than the second work function and lower than the first energy level.

This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer; one electrodeA and the other electrodeB provided to have a nanogap on the first insulating layer; a metal nanoparticle or a functional molecule provided between the one electrodeA and the other electrodeB; a second insulating layerprovided on the first insulating layer, and on the one electrodeA and the other electrodeB to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Nanodevice and method for fabricating the same

A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein the polymer chain is chemically crosslinked with a glass matrix of the network structure of the metal oxide directly or indirectly, and a volume resistivity measured by setting a ratio of a voltage to a film thickness at 10.sup.6 V/cm according to a disc plate electrode method is not more than 3.times.10.sup.6 .OMEGA.cm.

Glass composite material, precursor thereof, nitrogen-containing

A liquid crystal display device comprises two substrates opposed to each other, a comb-shaped wall electrode formed to correspond to each pixel of an array defined by vertical and horizontal wires formed on the substrate, the comb-shaped wall electrode having a plurality of elemental electrodes, major surfaces of each of the elemental electrodes being substantially perpendicular to the surfaces of the two substrates, and the major surfaces of adjacent ones of the elemental electrodes constituting counter electrodes to each other, and a liquid crystal filled in a gap of the comb-shaped wall electrode provided between the two substrates.

Reflection type liquid crystal display device having comb-shaped wall

Growing community of inventors

Yokohama, Japan

Yutaka Majima