Toyota Jidosha Kabushiki Kaisha

Silicio Ferrosolar S.l.

Nippon Steel Sumitomo Metal Corporation

Yutaka Kishida

Kazuhiko Kusunoki

Hironori Daikoku

Hitoshi Dohnomae

Kazuaki Seki

Kazuhito Kamei

Motohisa Kado

Masataka Hiyoshi

Jiro Kondo

Shinji Tokumaru

Tomohiro Sato

Masayoshi Doi

Shigeru Nakazawa

Kozo Onoue

A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si&#x2014;C solution having a temperature gradient such that a temperature of the Si&#x2014;C solution decreases from an interior of the Si&#x2014;C solution toward a liquid level of the Si&#x2014;C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si&#x2014;C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

SiC single crystal production method and production apparatus

Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.

Silicon refining device

Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon

A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si&#x2014;C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mmor greater, depth of Si&#x2014;C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si&#x2014;C solution with high-frequency coil.

Method for producing SiC single crystal

Growing community of inventors

Tokyo, Japan

Yutaka Kishida