Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Yutaka Kadogawa

Osamu Koike

Shigeru Yamada

There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one Through Silicon VIA electrode is formed, being electrically connected to the electrode pad by way of the non-active area. The non-active area has an insulating region obtained by forming an insulating film on the semiconductor substrate, and a dummy section obtained by leaving a base material of the semiconductor substrate in the insulating region. The dummy section is provided in a position where an outer edge of the Through Silicon VIA electrode does not intersect with the boundary between the insulating region and the dummy section.

Method for manufacturing a semiconductor device having a dummy section

Semiconductor device having a dummy portion, method for manufacturing the semiconductor device, method for manufacturing a semiconductor package having the semiconductor device

To improve connection reliability of a through electrode in a semiconductor device, and prevent deterioration of electrical characteristics due to a residue generated from a pad at the time of forming the through electrode. A contact area between a pad and a conductor layer is equal to a diameter of a hole of an opening provided in a silicon substrate. Consequently, it is possible to increase the contact area as compared with a conventional configuration. This improves the connection reliability. Furthermore, a residue containing metal is attached to the outside of an insulation film in the manufacturing process. Consequently, the residue is prevented from contacting a silicon substrate body. Also, heavy metals, such as Cu, in the residue are prevented from being diffused into the silicon substrate body. Therefore, it is possible to prevent the deterioration of electrical characteristics.

Semiconductor device including electrode structure with first and second openings and manufacturing method thereof

An insulator layer is formed on a part of semiconductor substrate to form an isolation layer that insulates and separates active elements from each other in the first region, and to form a dummy portion which is composed of a base material of the semiconductor substrate exposed in the insulator layer in a second region. Active elements are formed in the first region. A silicide layer is formed on the first and second regions excluding at least a portion in which the TSV electrode should be formed. At least one TSV hole extending from a reverse surface side of the semiconductor substrate to an electrode pad via the second region is formed. A conductive film is formed on the inner wall of the TSV hole to form a TSV electrode electrically connected to the electrode pad.

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Tokyo, Japan

Yutaka Kadogawa