Nissin Ion Equipment Co., Ltd.

Nissin Electric Co., Ltd.

Tokyo University of Agriculture and Technology

Yutaka Inouchi

Takeshi Matsumoto

Yasunori Ando

Toshiyuki Sameshima

Yasuhiro Matsuda

Masahiro Tanii

Katsuharu Imai

Yuko Fujimoto

Syojiro Dohi

A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.

Beam profile determination method and ion beam irradiation apparatus

An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.

Bucket-type ion source for fanning cusped magnetic fields inside a plasma generation chamber

A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000&#xb0; C. to 1200&#xb0; C. for a duration in a range of approximately 10 &#x3bc;s to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.

Manufacturing method of thin film semiconductor substrate

When an ion beamis to be extracted from an ion sourceby using a gas containing boron trifluoride as an ion source gasfor supplying the gas into a plasma chamberfor the ion source, a bias voltage Vof a plasma electrodewith respect to the plasma chamberfor the ion sourceis set to be positive by a bias circuit

Method of operating ion source and ion implanting apparatus

A first coil is provided at a position near the start terminal (closer to the window) of plasma chamber. A second coil is provided at a position near the end terminal thereof (plasma electrode). To adjust an ion beam current, a constant current, which is capable of developing a magnetic field greater than a resonance magnetic field, is fed to the first coil, and a second coil current is varied within a range within which it develops a magnetic field less than the resonance magnetic field.

Growing community of inventors

Kyoto, Japan

Yutaka Inouchi