Canon Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Renesas Technology Corp.

Yutaka Inaba

Shinjiro Okada

Osamu Taniguchi

Kazunori Katakura

Akira Tsuboyama

Junichiro Kanbe

Shuzo Kaneko

Yukio Hanyu

Tsutomu Toyono

Akihiro Mouri

Hironobu Mizuno

Hideyuki Kawagishi

Hiroshi Inoue

Junichi Tsuchimoto

Masanobu Asaoka

Makoto Kojima

Toshiharu Uchimi

Kenji Shinjo

Tadashi Mihara

Yoshiyuki Osada

Hiroyuki Kitayama

Yoshio Hotta

Kiyoshi Mori

Hideaki Takao

Yujiro Ando

Akio Yoshida

Tamotsu Ogata

Hitoshi Shindo

Mitsuo Iwayama

Hirofumi Shibata

Masataka Yamashita

Yasufumi Asao

Tohru Takahashi

Hirokatsu Miyata

Hideyuki Sugioka

Tatsuo Murata

Katsuhiko Shinjo

Masaki Kuribayashi

Takuya Futase

Yukiko Futami

Shigenari Okada

Masahiko Sakayori

Naoki Otsuji

Koichi Sato

Shinichi Nakamura

Katsumi Nakagawa

Kazuharu Katagiri

Yasuyuki Tamura

Masahiro Terada

Takashi Enomoto

Takashi Kato

Katsumi Kurematsu

Somei Kawasaki

Masahiko Enari

Hideo Mori

Masami Iseki

Tatsuo Takeuchi

Masaru Kamio

Jun Iba

Yukio Nagase

Hiroyuki Tokunaga

Katsutoshi Nakamura

Yasuto Kodera

Hisanori Tsuda

Hirohide Munakata

Hidetoshi Tsuzuki

Haruo Fujii

Hiroshi Satomura

Takahiro Hachisu

Kiyoteru Kobayashi

Haruo Tomono

Hidemi Egami

Yuji Matsuo

Yoshikazu Ohno

Akihito Hosaka

Kazuhiro Aihara

Kazutoshi Wakao

Koji Kanaya

Fujio Someya

Jotaro Takahashi

Tamotu Ogata

Yasuteru Hongu

Reliability of a semiconductor element and its product yield are improved by reducing variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310&#xb0; C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)Si phase. After removing unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of each thermal treatment is set to 10&#xb0; C./s or more.

Method of manufacturing a semiconductor device

To provide a technique capable of improving the reliability of a semiconductor element and its product yield by reducing the variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310&#xb0; C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)Si phase. Subsequently, after removing the unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of the first thermal treatment is set to 10&#xb0; C./s or more (for example, 30 to 250&#xb0; C./s) and the temperature rise rate of the second thermal treatment is set to 10&#xb0; C./s or more (for example, 10 to 250&#xb0; C./s).

An active matrix display apparatus includes an active matrix display panel comprising a plurality of pixels arranged in a matrix in a row direction and a column direction, each pixel being constituted by a plurality of subpixels; and a drive circuit for applying a voltage to each of the subpixels so that a polarity of the voltage is inverted at a predetermined period in each of a row direction and a column direction. The plurality of subpixels are arranged in the row direction at a period different from half of the predetermined period of polarity inversion of the voltage in the row direction, thus providing flicker-less color display device even when general driver ICs for dot inversion drive are used.

Color display device

An organic EL display apparatus has a driving circuit. In the driving circuit, the source and drain of a driving transistor and the anode and cathode of an organic EL device are connected in series between voltage sources. A current passes between the source and drain of the driving transistor and between the anode and cathode of the organic EL device in accordance with a voltage between the gate and source of the driving transistor. Consequently, the organic EL device emits light. In order to store the voltage in the capacitor, a constant voltage source is connected to the gate of the driving transistor and the above-described series connection is disconnected at the source of the driving transistor and connected to a signal source. Then, a current signal output from the signal source passes between the source and drain of the driving transistor, and charges are stored in a capacitor in accordance with the current signal.

Organic EL display apparatus and driving method therefor

Since icons for identifying the contents of orders received or orders placed and the numbers of data representing the processing a status of the orders received or orders placed are displayed in combination to manage orders received and orders placed for parts, the processing status such as orders expected to be received, determination of orders, delay in scheduling, acceptance, and the like in the shop can be visually and quickly checked. Detailed information associated with the orders expected to be received, determination of orders, delay in scheduling, and the like is visually presented as a graph and table which correspond to the parts management items identified by icons. Progress in order received/placed processing can be reviewed on day-to-day basis, and comparison of a plurality of managed items can be made, thus realizing versatile parts management. The parts management by means of a display using common icons for identifying the management units of orders received and orders placed can easily determine the correspondence between the processing a status of the overall shop and detailed information in units of parts, thus allowing easy and accurate order received/placed management.

Parts management information system and parts management method, and storage medium

A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.

Semiconductor device and manufacturing method thereof

Improvements are realized in the coverage characteristics of a cell plate electrode with respect to a cylindrical storage node electrode which has a high aspect ratio (height/diameter) and a surface having minute irregularities formed thereon, thereby improving the electrical characteristics and reliability of a semiconductor device. The semiconductor device is manufactured through a step of forming a first cell plate electrode film on a cylindrical storage node electrode, a process of implanting conductive impurities into the first cell plate electrode film, and a process of forming a second cell plate electrode film on the first cell plate electrode film.

Liquid crystal element and liquid crystal apparatus using the same

A method, system and program for managing quality information of components comprises by inputting and storing quality information of an ordered component, inputting quality information of a delivered component, checking the quality information of the delivered component, updating the stored quality information in accordance with a check result, and transmitting the updated quality information to a shop that uses the component. The component delivered to the shop is maintained in a matched relationship with associated quality information.

Quality management of components

After a bottom electrode,of a capacitor is formed, a nitride film as an insulating film,of the capacitor is formed on the bottom electrode,by CVD. Then, the insulating film,is wet-oxidized at a temperature in a range of 700&deg; C. to 760&deg; C. Finally, a top electrode,of the capacitor is formed on the insulating film,The insulating film,forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.

Manufacturing method of a semiconductor device

An liquid crystal apparatus, includes: (a) a liquid crystal device including: a pair of substrates each provided with a uniaxial alignment axis, and a chiral smectic liquid crystal having a negative dielectric anisotropy disposed between the pair of substrates and capable of forming a higher-temperature bistable alignment state and a lower-temperature bistable alignment state in its chiral smectic C phase, the chiral smectic liquid crystal being further placed in the lower-temperature bistable alignment state formed by cooling from the higher-temperature bistable alignment state; and (b) voltage application means including: an AC voltage application means for applying to the chiral smectic liquid crystal an AC voltage insufficient to cause a switching from one to the other or from the other to one of the bistable alignment state, and a switching voltage application means for applying to the chiral smectic liquid crystal a voltage of one polarity sufficient to cause a switching from one to the other of the bistable alignment state and a voltage of the other polarity sufficient to cause a switching from the other to one of the bistable alignment state.

Liquid crystal apparatus

A liquid crystal device having a matrix of pixels formed at intersections of scanning electrodes and data electrodes with e.g., a chiral smectic liquid crystal having at least two stable states, is driven at a high speed by simultaneously selecting M scanning electrodes (M being an integer of at least 2), and applying scanning signals to the simultaneously selected scanning electrodes and data signal to the data electrodes so as to apply writing pulses for determining states of pixels to pixels at the intersections of the selected scanning electrodes and the data electrodes and so that each pixel on the selected scanning electrodes is supplied with writing pulse(s) of a writing polarity having a time-integrated voltage value which is larger than that of writing pulse(s) of an anti-writing polarity, if any.

A method of manufacturing a semiconductor device including a capacitor having an increased capacity with improved yield is provided. Ions are implanted at an incidence angle of 0&deg; in a dose of 8&times;10,atom/cm,, at an energy of 20 keV, using a heavy current device and an amorphous silicon film having an upper surface flattened is formed. Only the flattened amorphous silicon film formed on the upper surface of an interlayer oxide film is etched back to form a storage electrode.

Method of manufacturing semiconductor device

A liquid crystal apparatus is constituted from a liquid crystal device including a first substrate having thereon a plurality of scanning lines, a plurality of data lines intersecting the scanning lines, an active element disposed at each intersection of the scanning lines and data lines, a plurality of pixel electrodes each connected to the scanning line and the data line via the active element and defining a pixel, a second substrate having a counter electrode thereon, and a ferroelectric liquid crystal disposed between the first and second substrates and capable of assuming an anti-ferroelectric state under application of no voltage and a first ferroelectric state and a second ferroelectric state under application of voltages corresponding to polarities of the applied voltages. The liquid crystal device is driven by applying voltages to the pixels so that each pixel is supplied with a voltage having a polarity which is inverted for each prescribed period, and a pixel having the ferroelectric liquid crystal in the first ferroelectric state and a pixel having the ferroelectric liquid crystal in the second state are co-present in each prescribed period. As a result, a difference in display performance when viewed in a oblique direction is alleviated.

An optical modulation device is constituted by a first substrate provided with a plurality of first electrodes each comprising a plurality of portions electrically independent of each other, a second substrate disposed opposite to the first substrate and provided with a plurality of second electrodes each confronting a corresponding first electrode, and an optical modulation substance disposed between the first and second substrates so as to form a plurality of pixels each having a particular electrode structure. In the electrode structure, the optical modulation substance is sandwiched between each second electrode and said portions of said corresponding first electrode so as to form a series circuit providing a plurality of capacitance, thus reducing the capacitance for each pixel to improve a switching characteristic while minimizing a defective portion due to a short-circuit between the confronting electrodes.

Optical modulation device with pixels each having series connected electrode structure

Growing community of inventors

Kawaguchi, Japan

Yutaka Inaba