Canon Kabushiki Kaisha

Yutaka Hirai

Katsumi Nakagawa

Toshiyuki Komatsu

Tadaji Fukuda

Takashi Nakagiri

Yukuo Nishimura

Masahiro Haruta

Hiroshi Matsuda

Teruo Misumi

Masafumi Sano

Hisanori Tsuda

Katsuji Takasu

Yoshiyuki Osada

Ken Eguchi

Takayuki Yagi

Satoshi Omata

Masaru Nakayama

Katsunori Hatanaka

Keisuke Yamamoto

Yoshio Suzuki

Jinsho Matsuyama

Osamu Takamatsu

Yuji Kasanuki

Yasuhiro Shimada

Akira Sakai

Yoshinori Tomida

Masao Ueki

Shunichi Uzawa

Hiroyasu Nose

Naoki Ayata

Masaki Fukaya

Takashi Hamamoto

Kunihiro Sakai

Hirohide Munakata

Katsuhiko Shinjo

Seishiro Yoshioka

Toshihiko Miyazaki

Shigeru Shirai

Haruki Kawada

Toshimitsu Kawase

Noritaka Mochizuki

Masao Sugata

Hiroshi Echizen

Takaaki Yamagata

Yasuhiro Simada

Yuki Kasanuki

Yasuhiro Shimida

A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

Method for forming deposited film

A process for producing a probe-driving mechanism. A laminate of a first and second insulating layer is placed on a support. Electrode layers and piezoelectric layers are successively laminated on the second insulating layer. Part of the support and second insulating layer is removed to form a cantilever.

Process for producing a probe-driving mechanism

A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.

Method for forming crystal and crystal article obtained by said method

Device for forming deposited film

An electrophotographic apparatus employs a charger for charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; an exposing station for imagewise exposing the member to form an electrostatic latent image; a developer station for developing the latent image to form a toner image; a transfer station for transferring the toner image to an image receiving sheet and a blade for cleaning the surface of the cylindrical member.

Electrophotographic method using a cleaning blade to remove residual

An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Image forming member for electrophotography

A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Electrophotographic photosensitive member and process for production

An electrophotographic process is conducted by charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; imagewise exposing the member to form an electrostatic latent image; developing the latent image to form a toner image; transferring the toner image to an image receiving sheet and thereafter cleaning the surface of the cylindrical member with a cleaning blade.

A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

Method for forming a deposited film

A process for forming a deposited film comprises the steps of:

Process for forming and etching a film to effect specific crystal growth

A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

CVD method for forming a photoconductive hydrogenated a-Si layer

A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.

CVD process of forming hydrogenated a-Si films

Image-forming member for electrophotography

A parallel plane holding mechanism is constructed as follows. Beams are provided on the peripheral portion of a flat plate-shaped weight member. A base plate is provided so as to face the weight member. First and second electrodes are provided on both surfaces of the weight member and the base plate to face each other. A voltage is applied between the first electrode and the second electrode so that the distance between the weight member and the base plate is controlled to move the weight member to thereby hold a reference surface of the weight member to be parallel to a predetermined reference surface.

Parallel plane holding mechanism and apparatus using such a mechanism

A cantilever probe comprising a cantilever displacement element containing a piezoelectric material provided between driving electrodes for causing displacement of the piezoelectric material, a probe for information input and output provided on the free end of the element, a drawing electrode for the probe and, a non-electroconductive thin film provided on at least a portion of an end of the element.

Cantilever probe and apparatus using the same

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Tokyo, Japan

Yutaka Hirai