Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Yutaka Harada

Toshiyuki Fukuda

Masanori Minamio

Shinji Murakami

Yoshiki Takayama

Yoshifumi Nakamura

Nozomi Shimoishizaka

Takahiro Kumakawa

Tetsushi Nishio

Ryuichi Sahara

Kiyokazu Itoi

Kenichi Sato

Norihito Tsukahara

Mitsunori Yokomakura

Toshio Fujii

Mitsumasa Oku

Tomoko Komatsu

Takashi Akiguchi

Takuya Oka

Keiichi Iiyama

Hiroto Ohsaki

Eizou Fujii

Takashi Noda

Masashi Kuroda

Yutaka Fukai

Masaru Tanichi

Takahito Ishikawa

A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting device further includes the translucent member having a translucent base and the wavelength conversion layer formed on the translucent base. The wavelength conversion layer does not contact the light-emitting element, and is sealed in the light-emitting device.

Light-emitting device

One end of a flexible substrate is connected to a solid-state image sensing device and the other end constitutes an external connection part in which external lead-out electrodes are provided. A plurality of electronic components are mounted on a mounting part of the flexible substrate. The flexible substrate is bent at a first bent part thereof to make an acute angle with the solid-state image sensing device and also bent at a second bent part thereof to make an acute angle with the external connection part. The two acute angles are alternate angles and the solid-state image sensing device has a cross section of the letter Z.

Optical device module, fabrication method thereof, optical device unit and fabrication method thereof

A solid-state image sensor includes a first image sensing device, a first flexible substrate connected to the first image sensing device, a second solid-state image sensing device, and a second flexible substrate connected to the second solid-state image sensing device. The solid-state image sensing devices are disposed adjacently to each other such that light receiving surfaces are perpendicular to each other. The second solid-state image sensing device directly receives incident light. However, the first solid-state image sensing device receives the incident light reflected by a mirror. Electronic components are mounted on the two flexible substrates. The first flexible substrate is bent at two bending positions to face the second flexible substrate and electrically connected thereto.

Optical device module and method for fabricating the same

An optical device includes an optical element, a transparent member arranged on the optical element, and a transparent resin adhesive for causing the transparent member to adhere and be fixed onto a circuit formation face of the optical element. The optical device includes a light detecting region having a plurality of micro lenses, a peripheral circuit region formed in the outer peripheral part of the light detecting region, and an electrode region formed at the outer peripheral part of the peripheral circuit region. A roughed region in a saw-toothed shape in section is formed in part of a face of the transparent member which adheres to the optical element, the part being overlapped with the outer peripheral part of the light detecting region as viewed in plan.

Optical device, optical device apparatus, camera module, and optical device manufacturing method

An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.

Optical device and manufacturing method thereof

A semiconductor device including a package () having a plurality of wall portions () and a plurality of conductor portions (), a semiconductor element such as a solid-state image pickup device () mounted in an internal space of the base, thin metal wires () electrically connecting the semiconductor element and the conductor portions () between the wall portions (), a resin sealing material () implanted in the spaces between the wall portions (), and a closing member such as a cover glass (). The region for connecting the thin metal wires () and the wall portion () region overlap each other, so that the device can be reduced in size and in height. The cover glass () can not move easily from the correct position because the wall portions () serve as supporting columns, thereby improving the yield.

Semiconductor device and method of manufacturing the same

An optical apparatus includes an optical device (LED device or semiconductor imaging device) having a photoreceptor/light-emitting region, a peripheral circuit region and an electrode region, a transparent member having a larger light passing through region than the optical device and including, on one surface thereof, protruding electrodes for connection to the optical device, external connection electrodes for connection to a mounting substrate, conductive interconnects for connecting the protruding electrodes and the external connection electrodes, and a transparent adhesive provided between the optical device and the transparent member. In the optical apparatus, one surface of the optical device in which the photoreceptor/light-emitting region is formed and one surface of the transparent member are arrange so as to face to each other and electrodes of the optical device and the protruding electrodes of the transparent member are electrically connected and also adhered by the transparent adhesive.

Optical apparatus and optical module using the same

A low elasticity layer ( ) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate ( ). On the low elasticity layer ( ), lands ( ) serving as external electrodes are disposed, and pads ( ) on the element electrodes, the lands ( ) and metal wires ( ) for connecting them are integrally formed as a metal wiring pattern ( ). A solder resist film ( ) having an opening for exposing a part of each land ( ) is formed, and a metal ball ( ) is provided on the land ( ) in the opening. The low elasticity layer ( ) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires ( ).

Semiconductor device and method for manufacturing the same

An electronic circuit module formed of an antenna coil and an integrated circuit provided on a circuit board is provided inside a hollow resin case formed of a first part and a second part. A first slit leading into the hollow portion is provided in one side face of the resin case formed of the first and second parts joined to each other. Since the electronic circuit module is not exposed to high temperatures and high pressure during the manufacturing process, defects such as the breakage of the integrated circuit or the disconnection of the antenna coil can be avoided. Since the slit leading into the hollow portion is provided, the hollow portion does not swell by the temperature increase. In addition, pinholes do not tend to be formed during the joining of the first and second parts. Thus, a contactless data carrier with an excellent electrostatic withstand voltage characteristic can be provided.

Contactless data carrier

A method for mounting parts, and an IC card and its manufacturing method. The method reduces the number of steps, increases productivity, lowers costs, and miniaturizes the chip. A first electrode of the IC chip for processing signals received from a coil is connected to an internal end of a coil pattern formed on a first substrate, and an external end of the coil pattern and a second electrode of the IC chip are connected via a jumper wire.

Method for mounting parts and making an IC card

A low elasticity layer (,) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (,). On the low elasticity layer (,), lands (,) serving as external electrodes are disposed, and pads (,) on the element electrodes, the lands (,) and metal wires (,) for connecting them are integrally formed as a metal wiring pattern (,). A solder resist film (,) having an opening for exposing a part of each land (,) is formed, and a metal ball (,) is provided on the land (,) in the opening. The low elasticity layer (,) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (,).

Growing community of inventors

Kyoto, Japan

Yutaka Harada