Nikon Corporation

Other

Yutaka Hamamura

Kiyoshi Kadomatsu

Hiroaki Okagawa

Kazuyuki Tadatomo

Kazumasa Hiramatsu

Yasutoshi Takada

Masahiro Koto

Sumito Shimizu

Noboru Amemiya

Youichiro Ohuchi

Yoshiro Tani

An optical element that includes a substrate having two surfaces, each of the surfaces having a micro-relief structure that includes numerous fine protrusions, and a film that includes one or more layers including a metal layer and that is formed on one of the micro-relief structures.

Light absorbing optical element having micro-relief structure

An optical element manufacturing method includes: disposing a light-shielding layer () that includes at least an Si layer as an uppermost layer, on a substrate () used as a base member, forming an optical aperture () at the light-shielding layer () and forming a fine recession/projection structure (MR) at a surface of the uppermost layer through dry etching.

Optical element manufacturing method, optical element, Nipkow disk, confocal optical system and 3-D measurement device

A semiconductor light receiving element having a light receiving layer ( ) formed from a GaN group semiconductor, and an electrode ( ) formed on one surface of the light receiving layer as a light receiving surface ( ) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode ( ) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface ( ), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface ( ). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer ( ) is a first conductivity type i layer, and the aforementioned electrode ( ) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer ( ).

Semiconductor light receiving element

Growing community of inventors

Yokohama, Japan

Yutaka Hamamura