Casio Computer Co., Ltd.

Other

Oki Electric Industry Co., Ltd.

The University of Electro-communications

Yutaka Aoki

Ichiro Mihara

Kazuhiko Honjo

Akira Saitou

Takeshi Wakabayashi

Katsumi Watanabe

Hidemi Sasaki

Shigeru Yagi

Kaoru Yoshida

Iwao Tahara

Taichi Itoh

Hiroshi Takenaka

Akira Takeoka

Sayaka Nishikado

An antenna device of the present invention includes an antenna element which transmits or receives an electromagnetic wave having a specific frequency by being supplied with electric power, a conductive element which is formed of a conductive material, arranged so as to be spaced apart from and face the antenna element, and serves as a parasitic element, and a housing having a sealed space therein. The antenna element is provided inside the housing, and the conductive element is provided on outer surface of the housing, or in inner part of the housing, or in a mount member by which the housing is worn on a human body, or in a holding member for holding the housing; the conductive element is electromagnetically coupled to the antenna element, resonates with the specific frequency; and transmits or receives the electromagnetic wave.

Antenna device

A multi-frequency circularly polarized antenna () comprises a substrate and multi-frequency antennas (). The multi-frequency antennas () comprise antenna elements (), shunt-inductor conductors (), series-capacitor conductors (), series-inductor capacitors (), a center point () and input/output terminals (). The multi-frequency circularly polarized antenna () is constructed by connecting the shunt-inductor conductors () of the multi-frequency antennas () at the center point () in a substantially perpendicular manner.

Antenna

A multi-frequency antenna () comprises a dielectric substrate (), an antenna element (), a shunt inductor (), a capacitor conductor (), a series inductor (), a grounded part () and a feeding point (). The antenna element () is arranged on the substrate (), and is electrically connected to the grounded part () through the shunt inductor (). Moreover, the antenna element () is electrically connected to the feeding point () through a series capacitor formed by a part where the antenna element () faces the capacitor conductor () and the substrate () therebetween, and through the series inductor ().

Multi-frequency antenna

A miniature variable-beam microwave antenna () comprises antenna conductors (), an EBG conductor (), a variable reactance element (), and an adjusting part (). The EBG conductor () is connected to a grounded part () through the variable reactance element (). The adjusting part () changes the apparent reactance of the EBG conductor () by changing the capacity of the variable reactance element (). As the apparent reactance of the EBG conductor () changes, the directivity of the miniature variable-beam microwave antenna () also changes.

The present invention provides an antenna that enables circular polarization in a plurality of oscillation frequencies. A multi-frequency circular polarization antenna is formed with a substrate and multi-frequency antennas. The multi-frequency antennas are formed with antenna elements, shunt inductor conductors, series capacitor conductors, series inductor conductors, a center point, and input/output terminals. The multi-frequency antenna is arranged to cross the multi-frequency antenna at the center point to make an angle that is less than 90 degrees with respect to the multi-frequency antenna.

A semiconductor device includes a semiconductor substrate on one side of which an integrated circuit and a plurality of connection pads connected to the integrated circuit are provided. An insulating film is provided on the plurality of connection pads except for parts of the connection pads and on the one side of the semiconductor substrate. A plurality of wiring lines are provided to be electrically connected to the integrated circuit via the connection pads, each of the wiring lines having a connection pad portion. A plurality of columnar electrodes are respectively provided on one side of the connection pad portions of the wiring lines. A sealing film is provide on the peripheries of the columnar electrodes to cover the integrated circuit and which is provided. At least one of the insulating film and the sealing film is formed of a resin in which magnetic powder is mixed.

Semiconductor device with magnetic powder mixed therein and manufacturing method thereof

In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.

Semiconductor device having a thin-film circuit element provided above an integrated circuit

A chip-type electronic component includes a substrate, a common potential layer formed on an upper side of the substrate, an insulating film formed on the common potential layer, and provided to expose at least part of the common potential layer. At least one common potential electrode is provided on the exposed part of the common potential layer, and a plurality of conductors provided on the insulating film, each of the conductors forming a part of a thin-film circuit element. At least one columnar electrode is electrically connected to at least one of the conductors, and a sealing film is formed around the columnar electrode.

Chip-type electronic component including thin-film circuit elements

A semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a thin-film inductor element which is formed on the insulating film, and which includes first and second terminals and a conductive layer formed into a spiral shape between the first and second terminals so as to have a plurality of turns and at least one intersection. The conductive layer includes (i) a first conductor layer formed on the semiconductor substrate, and (ii) a second conductor layer which is formed on the insulating film, intersects the first conductor layer via the insulating film at the intersection. The thin-film inductor element has an arrangement in which the first and second conductor layers are symmetrically arranged in directions from an intermediate point between the first and second terminals along the longitudinal direction of the conductive layer to the first and second terminals.

Semiconductor device

A semiconductor package includes a semiconductor structure having a plurality of electrodes for external connection which are provided on a semiconductor substrate, an insulation layer provided on the semiconductor structure, an upper wiring having connection pad portions and provided on the insulation layer such that at least parts of the upper wiring are connected to the electrodes for external connection of the semiconductor structure, a micro electric mechanical system electrically connected to parts of the connection pad portions of the upper wiring, pole electrodes provided so as to be electrically connected to other connection pad portions of the upper wiring, and an upper insulation film covering the vicinities of the pole electrodes and at least the vicinity of the micro electric mechanical system.

Semiconductor package having built-in micro electric mechanical system and manufacturing method thereof

A connection pad, an insulating film, a ground layer a protective film, first to third wirings and posts S, S, G, D on the wirings are disposed on a semiconductor substrate. In this case, the first wiring transmits a high frequency signal, and a dummy pad portion and dummy post D for restraining attenuation of the high frequency signal are disposed midway in the wiring and not connected to external, circuits. An opening for decreasing a floating capacity is disposed in the ground layer under the posts S, D.

High frequency signal transmission structure

A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.

A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive layer which is formed on a second connection pad so as to be electrically connected to the second connection pad, an encapsulating film which is formed at least around the first columnar electrode, on the semiconductor substrate and on the first conductive layer, and a second conductive layer which is formed on the encapsulating film so as to face the first conductive layer. A passive element is formed from the first and second conductive layers.

Semiconductor device having a chip size package including a passive element

A plurality of sheets of photofixed-recording medium are stacked on top of each other and stored in a cartridge. An EEPROM is attached to the cartridge. The EEPROM is connecting to a memory connection section. A central processing unit is connected to the memory connecting section. The central processing unit can write information to the EEPROM of the cartridge or read information therefrom. Access to EEPROM can be correctly obtained only when the cartridge is properly inserted into a printing apparatus.

Growing community of inventors

Ome, Japan

Yutaka Aoki