Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Nihon Nohyaku Co., Ltd.

Nuvoton Technology Corporation Japan

Panasonic Semiconductor Solutions Co., Ltd.

Nihon Nohyaku., Ltd.

Yutaka Abe

Kazuko Nishimura

Masashi Murakami

Yoshiyuki Matsunaga

Yoshihiro Sato

Junji Hirase

Hiroshi Fujinaka

Makoto Ikuma

Masahiro Higuchi

Kenichi Shimomura

Sanshiro Shishido

Kenji Watanabe

Norihiko Sumitani

Hiroto Harayama

Dai Ichiryu

Hirokazu Fujihara

Shunsuke Fuchi

Yutaka Kato

Keizo Nishikawa

Yusuke Shimizu

Hiroshi Kimura

Akiyuki Suwa

Ikki Yonemura

Takashi Furuya

Ryosuke Tanaka

Shunpei Fujie

Naoya Fujita

Atsushi Okada

Takayasu Kito

Yuusuke Yamaoka

Naoto Shimizu

Katsumasa Hijikata

Keiichi Yamada

Toshimasa Takagi

Fumihiro Kasano

Soichiro Matsuo

Kosuke Fukatsu

Yosuke Higashi

Hidehiko Fujikawa

Hiroyuki Amikawa

Nobuyuki Hayashi

Toru Mugiuda

Kazushi Goto

Hiroyuki Toyoda

Toshiaki Hiraoka

Ryota Kasahara

Kayo Inukai

Motofumi Nakano

Eikou Satoh

Chiaki Yamauchi

Hirotaka Hamaguchi

Tetsuya Murata

Eiji Yasukouchi

Rie Ryuzaki

Yuhji Sakurai

Yuki Saito

Ayuko Nakauchi

Yukihiro Matsuoka

A solid-state imaging device includes: a plurality of pixel circuits arranged in rows and columns; a plurality of selector circuits that each receive, as inputs, two pixel signals corresponding to two columns different from each other; k column AD conversion circuits that perform AD conversion on pixel signals output from the plurality of selector circuits, k being an integer greater than or equal to two; and m column AD conversion circuits that are provided redundantly. In the solid-state imaging device, the plurality of selector circuits selectively exclude, from among the k column AD conversion circuits and the m column AD conversion circuits, m column AD conversion circuits corresponding to m columns adjacent to each other, and associate k pixel signals output from the plurality of pixel circuits with k column AD conversion circuits which have not been excluded.

Solid-state imaging device with redundant ad conversion circuits and selective exclusion

A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

Solid-state imaging apparatus and imaging apparatus including the same

An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

Imaging device including a photoelectric converter and a capacitive element having a dielectric film sandwiched between electrodes and a mode switching transistor

A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

Solid-state imaging device

An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

An imaging device is provided with an amplification transistor having a gate connected to a charge accumulator, a feedback transistor of which the source or drain is electrically connected to the charge accumulator and the other is connected to the source or drain of the amplification transistor, a current supply that supplies a current to a first node, a first select transistor of which the source or drain is connected to the other of the amplification transistor, a second select transistor of which the source or drain is connected to the source or drain of the amplification transistor, a current source/voltage source switching circuit that selectively connects a current source or a first voltage supply circuit to the other of the first select transistor, and a second voltage supply circuit connected to the other of the second select transistor.

Imaging device

An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

Imaging device including unit pixel cell

An amide compound represented by the general formula [I]: or a salt thereof, an agricultural and horticultural microbicide comprising the compound or the salt as an active ingredient, and a method for using the agricultural and horticultural microbicide.

Amide compound or salt thereof, agricultural and horticultural microbicide comprising the compound and the salt, and method for using the agricultural and horticultural microbicide

An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, the multilayer wiring structure includes an insulating layer adjacent to the first capacitance element, and a permittivity of the dielectric film is greater than a permittivity of the insulating layer.

Imaging device including photoelectric converter and circuitry including a first capacitance element, a second capacitance element and a transistor

The present invention has an object to develop and provide a novel agricultural and horticultural insecticidal and acaricidal agent due to the factors such as serious damages caused by pests and the like and growing resistant pests against existing drugs in the crop production such as agriculture and horticulture. The present invention provides an agricultural and horticultural insecticidal and acaricidal agent having as an active ingredient a benzimidazole compound represented by general formula (1) wherein R represents an alkyl group or the like, Rrepresents a haloalkyl group or the like, X represents an oxygen atom or the like, m and n represent 0 or the like, or a salt thereof, and a method for using the same.

Benzimidazole compound or salt thereof, agricultural and horticultural insecticidal and acaricidal agent containing said compound, and method for using same

A solid-state imaging device includes a first A/D converter circuit and a second A/D converter circuit per column. The first A/D converter circuit performs a first A/D conversion that (i) refines, using a first comparator, a range including a potential of an analog signal through a binary search, and (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of the digital signal. The second A/D converter circuit performs a second A/D conversion that generates a second digital signal being a low-order portion that is a remainder of the digital signal by measuring a time required for an output of the second comparator to be inverted, the second comparator comparing a quantitative relationship between the analog signal refined and a ramp signal.

Solid-state imaging device, and camera system using same

A solid-state imaging device includes an A/D converter per column. The A/D converter performs a first A/D conversion that (i) refines, using a first comparator, a range including a potential of an analog signal to a range of a potential corresponding to a difference between a first potential and a second potential through a binary search, and further (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of a digital signal. The A/D converter also performs a second A/D conversion that generates, based on a ramp signal and the result of the binary search, a second digital signal being a low-order portion of a remainder of the digital signal, by measuring a time necessary for an output of a second comparator to be inverted.

An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

Imaging device including photoelectric converter and capacitor with a capacitor and a switching element connected in series between a first electrode of a photoelectric converter and a voltage source or a ground

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Osaka, Japan

Yutaka Abe