Renesas Electronics Corporation

Disco Corporation

Nihon Parkerizing Co., Ltd.

Brain-pad Incorporated

Kewpie Corporation

Yuta Yoshida

Makoto Yabuuchi

Shinji Tanaka

Yoshisato Yokoyama

Hironari Ohkubo

Kentaro Odanaka

Yuri Ban

Shinya Honda

Hidehiro Yamaguchi

Shigeki Yamamoto

Keita Obara

Kuo Wei Wu

Taketoshi Yamamoto

Mitsuhisa Ota

Hiroki Sunada

Kotaro Furihata

Yoshimitsu Imazu

Takeshi Ogino

Alejandro Javier Gonzalez Tineo

Kenji Suzuki

Yohei Sugawara

Hiromu Suzuki

A laser processing apparatus includes a laser beam applying unit for applying a laser beam to a workpiece, an image capturing unit for producing a captured image of the workpiece that includes a captured image of light emitted from the workpiece when the laser beam is applied to the workpiece by the laser beam applying unit, and a control unit. The laser beam applying unit includes a laser oscillator for emitting a laser beam and a condensing lens for converging the laser beam onto the workpiece. The control unit includes a determining section for determining a state of the laser beam applied to the workpiece, on the basis of the shape of the captured image of the light that is included in the captured image of the workpiece.

Laser processing apparatus

A laser processing apparatus includes an energy distribution correcting unit that forms skirt parts of a Gaussian distribution of an energy distribution in a Y-axis direction regarding a laser beam emitted from a laser oscillator into a perpendicular distribution, an imaging lens group composed of two or more lenses that form an image of the beam shape of the laser beam for which the energy distribution has been corrected by the energy distribution correcting unit on the upper surface of the workpiece, and one cylindrical lens that adjusts the energy density in an X-axis direction regarding the laser beam for which the energy distribution has been corrected by the energy distribution correcting unit.

A laser processing apparatus has a laser beam applying unit for applying a laser beam to a workpiece held on a chuck table. The laser beam applying unit includes an elliptical spot forming member for changing the spot shape of a pulsed laser beam into an elliptical shape and making the major axis of the elliptical beam spot parallel to a feeding direction, a diffractive optical element for branching the pulsed laser beam having the elliptical beam spot obtained by the elliptical spot forming member, into a plurality of pulsed laser beams each having an elliptical beam spot whose major axis extends in the feeding direction, and a condensing lens for condensing each of the pulsed laser beams branched by the diffractive optical element to the workpiece in such a manner that the major axes of the elliptical beam spots of the pulsed laser beams branched are partially overlapped.

Laser processing apparatus and laser processing method

A food inspection apparatus includes: a conveyance unit; a light irradiation unit; an unit capturing an image of an inspection object A; a wavelength emphasis emphasizing a foreign substance specific wavelength characteristic of a foreign substance F from light having a wavelength of 300 nm to 1100 nm by using a first and/or second optical filter or a wavelength-specific light source; and an identification processing device identifying the foreign substance and including: a lightening unit normalizing the captured image with 256 or less of gradations into lightened data; and an identification unit having been provided with deep-learning of an identification processing of the foreign substance specific wavelength from the lightened data and identifying the foreign substance or a good item S in line from the lightened data obtained through capturing the image during conveyance of the inspection object.

Food inspection apparatus, method of inspecting food, and method of learning in identification unit of food inspection apparatus

A laser processing apparatus includes: a chuck table that holds a packaged wafer by a holding surface; a laser processing unit that applies a laser beam to the packaged wafer to form a through-groove along each division line; an X-axis moving unit that moves the chuck table in an X-axis direction; and an examination unit. The chuck table includes: a holding member that forms the holding surface; and a light emitting body. The examination unit includes: a line sensor that extends in a Y-axis direction; and a control unit that determines the result of processing through reception by the line sensor of light from the light emitting body through the through-groove. The line sensor images the whole surface of the packaged wafer being held by the chuck table.

A semiconductor device includes a semiconductor substrate, a memory cell formed on the semiconductor substrate, a word line connected to the memory cell, and an auxiliary line connected to the word line.

Semiconductor device

Based on a basic idea to effectively utilize a space created in a third wiring layer (M) by a zero-th wiring layer (M) which can exist by miniaturization of a FINFET, an auxiliary line AL is arranged in the space created in the third wiring layer, and this auxiliary line AL and a word line WL are electrically connected to each other. Thus, a measure (device) based on such new knowledge that rising time of a word line voltage is largely affected by a wiring resistance of the word line is achieved, a high-speed operation in an SRAM using the FINFET is achieved.

A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.

A processing method of a package wafer includes a mold resin removal step of exposing grooves filled with a mold resin of the package wafer in a peripheral surplus region, a holding step of holding the package wafer in such a manner that the grooves are exposed, an orientation adjustment step of causing the grooves to be parallel to a processing-feed direction in which processing feeding of a chuck table is carried out when dividing grooves are formed, a coordinate registration step of imaging both ends of the plural grooves exposed at a peripheral edge and registering coordinate information of both ends or a single side of the grooves from taken images, and a dividing groove forming step of calculating the positions of the dividing grooves to be formed along the grooves based on the registered coordinate information of the grooves and forming the dividing grooves along the grooves.

Processing method of package wafer

A package substrate machining method is provided. The package substrate includes a ceramic substrate, a plurality of device chips arranged on one face of the ceramic substrate, and a coating layer made of a resin that covers the entire one face of the ceramic substrate. The package substrate machining method includes a first laser-machined groove formation step adapted to form, in the coating layer, first laser-machined grooves along scheduled division lines set up on the package substrate by irradiating a laser beam at a wavelength absorbable by the coating layer from the coating layer side of the package substrate; and a second laser-machined groove formation step adapted to form, in the ceramic substrate and after the first laser-machined groove formation step, second laser-machined grooves along the scheduled division lines by irradiating a laser beam from the ceramic substrate side of the package substrate.

Package substrate machining method

A replenisher which is capable of supplying Zr ions to a metal surface treatment solution, while suppressing an increase in the HF concentration in the metal surface treatment solution, so that a chemical conversion coating film can be continuously formed on a steel sheet by electrolysis and contains (A) zirconium hydrofluoric acid or a salt thereof and/or (B) hydrofluoric acid or a salt thereof and (C) a fluorine-free zirconium compound. The total concentration (g/l) of zirconium ions derived from the components (A) and (C) is 20 or more, and the ratio of the total molar amount (M) of the fluorine ions derived from the components (A) and (B) relative to the total molar amount (M) of the zirconium ions derived from the components (A) and (C), namely M/Mis 0.01 or more but less than 4.00.

Growing community of inventors

Tokyo, Japan

Yuta Yoshida