Senju Sprinkler Company Limited

Elpida Memory, Inc.

Akebono Brake Industry Co., Ltd.

Colorlink Japan, Ltd.

Yuta Watanabe

Hisayoshi Ohkoshi

Yoshiki Sasaki

Hiroshi Yamamoto

Isamu Asano

Tsuyoshi Kawagoe

Motoyuki Miyaji

Takuya Takada

Tomoyasu Kakegawa

Miho Nishiyama

Hiromi Sasaoka

Naoya Higano

A friction material includes a friction modifier, a binder, and a fibrous material. An alkali metal salt of phosphoric acid and a metal sulfide are contained as the friction modifier. The alkali metal salt of phosphoric acid may include trisodium phosphate. A wax containing, as a main component, an ester of a higher fatty acid and a higher alcohol may be contained as the friction modifier.

Friction material

An optical apparatus includes a display that displays an image, and an optical system that includes a filter (a reflective polarizing plate) and a lens (a half mirror surface) arranged on a downstream side and an upstream side, respectively, on an optical axis L of a display and magnifies the image by at least the lens (half mirror surface). The optical apparatus drives the lens along the optical axis L with respect to the filter by a mobile device, or changes the surface shape or the lens power of the lens having a variable surface shape or variable lens power. Thus, the optical path is folded back twice between the filter and the lens of the optical system, and the image is magnified by the lens (the half mirror surface), so that the position of the magnified virtual image can be adjusted according to the diopter of the user.

Optical apparatus

Sprinkler head

Deflector for sprinkler head

A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film.

Semiconductor device including a phase-change memory element

Growing community of inventors

Tokyo, Japan

Yuta Watanabe