Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

The University of Tokyo

Hitachi High-tech Science Corporation

Hitachi High-technologies Corporaiton

Yuta Urano

Toshifumi Honda

Toshiyuki Nakao

Akira Hamamatsu

Yoshimasa Oshima

Shunji Maeda

Yukihiro Shibata

Hiroyuki Nakano

Sachio Uto

Shigenobu Maruyama

Shunichi Matsumoto

Takahiro Jingu

Toshihiko Nakata

Yuko Otani

Hidetoshi Nishiyama

Kaoru Sakai

Hideki Fukushima

Eiji Arima

Atsushi Taniguchi

Hisae Shibuya

Hiromichi Yamakawa

Yasuhiro Yoshitake

Masami Makuuchi

Taketo Ueno

Hisashi Hatano

Kaifeng Zhang

Izuo Horai

Keiko Oka

Hisaaki Kanai

Hirokazu Koyabu

Masaya Yamamoto

Masahiro Watanabe

Takehiro Hirai

Kazuo Aoki

Satoru Takahashi

Muneo Maeshima

Yoshiki Matoba

Junguo Xu

Akihiro Takeda

Hideaki Sasazawa

Yuki Shimizu

Akio Yazaki

Tatsuo Hariyama

Yasuko Aoki

Akira Maekawa

Hiroko Fujita

Kenji Maruno

Shinya Murakami

Kiyoshi Takamasu

Yoshiko Ishida

A defect inspection device in which an optical axis of a detection optical system is inclined with respect to a surface of a sample, and an imaging sensor is inclined with respect to the optical axis, a height variation amount of an illumination spot in a normal direction of the surface of the sample is calculated based on an output of a height measuring unit, a deviation amount of the focusing position with respect to the light receiving surface in an optical axis direction of the detection optical system is calculated based on the height variation amount of the illumination spot, the deviation amount of the focusing position being generated accompanying a height variation of the illumination spot, and the focus actuator is controlled based on the deviation amount of the focusing position, and scattered light intensities at the same coordinates of the sample are added.

Defect inspection device

A defect inspection apparatus includes an illumination unit configured to irradiate a surface of a sample with a linear illumination spot; a condensing detection unit configured to condense reflected light of the illumination spot and to control a polarization state of the incident light to form an optical image; and a sensor unit configured to output the optical image and including an array-shaped light receiving portion and an antireflection film at a position conjugate with the illumination spot, in which the condensing detection unit includes a polarization control unit configured to increase light incident efficiency to the sensor unit. The normal line of the light receiving surface of the sensor unit is inclined from the optical axis of the condensing detection unit by 10 degrees or more and less than 80 degrees. The light condensing detection unit increases the optical magnification in the lateral direction of the illumination spot.

Defect inspection apparatus and defect inspection method

A defect inspection device includes: an illumination optical system including a polarization element configured to switch polarization of irradiation light between first polarization and second polarization orthogonal to the first polarization; a polarization diffraction grating configured to emit diffraction light of a specific order of the irradiation light in a direction along a normal line of a sample stage surface, a diffraction efficiency of the specific order of the first polarization of the irradiation light is equal to or less than 20% of a diffraction efficiency of the specific order of the second polarization, the polarization diffraction grating being settable at a light collection position of the irradiation light on the sample stage surface and including an anisotropic pattern whose period is equal to or less than twice a wavelength of the irradiation light; a detection optical system.

Defect inspection device, defect inspection method, and adjustment substrate

A defect inspection device includes an illumination unit that irradiates a sample with a linear illumination spot; a condensing detection unit that condenses reflected light of the illumination spot from the sample; and a sensor unit that forms an optical image on a light reception surface, and outputs the optical image as an electrical signal. An angle α formed between an optical axis of the condensing detection unit and a longitudinal direction of the linear illumination spot is 10° or more and less than 80°. The sensor unit is a line sensor provided with an array-like light reception unit at a position conjugate with the illumination spot. An angle β formed between direction of the line sensor and the optical axis of the condensing detection unit is 10° or more and less than 80°, and has a difference from the angle α of 5° or more.

Defect inspection device and defect inspection method

An inspection device includes an illumination optical system that irradiates a sample with light having a predetermined wavelength, a detection optical system that includes a photoelectric conversion unit, and a data processing unit that extracts positional information of a foreign substance or a defect on the sample. The light collection optical system includes a polarized light transmission control unit that changes transmission characteristics according to polarization characteristics of the collected reflected light or scattered light. The polarized light transmission control unit includes a birefringence phase difference control unit that causes a predetermined phase difference between a fast phase axis and a slow phase axis of the reflected light or scattered light according to the polarization characteristics of the reflected light or scattered light, and a polarized light transmission unit that selectively transmits light according to a polarization direction of output light of the birefringence phase difference control unit.

Defect inspection device and inspection method, and optical module

A defect detection device including an illumination optical system, an image capturing optical system configured to capture an image of scattered light generated by the illumination optical system irradiating the wafer, and an image processing unit configured to process a picture of the image of the scattered light to extract a defect on the wafer. The image capturing optical system includes an objective lens, a filter unit configured to shield a part of light transmitted through the objective lens, and an imaging lens configured to form an image of light transmitted through the filter unit. The filter unit includes a first microlens array configured to condense parallel light transmitted through the objective lens, a shutter array including a light transmission unit at a focus position of the first microlens array, and a second microlens array disposed opposite to the first microlens array with respect to the shutter array.

Defect detection device, defect detection method, and defect observation apparatus including defect detection device

A distance measuring device includes a light emitting unit that outputs a measurement light, a first polarization state control unit that controls a polarization state of the measurement light output from the light emitting unit, a second polarization state control unit that controls the polarization state of the measurement light of which a polarization state is controlled by the first polarization state control unit, and an optical path switching element that selects an emission direction of the measurement light of which a polarization state is controlled by the second polarization state control unit, in which the second polarization state control unit controls the polarization state of the measurement light so that the measurement lights are emitted from the optical path switching element in a plurality of the emission directions, and the optical path switching element receives a reflected light obtained by reflecting the emitted measurement light by an object.

Distance measuring device, distance measuring method, and three-dimensional shape measuring apparatus

A defect inspection apparatus includes: an illumination unit configured to illuminate an inspection object region of a sample with light emitted from a light source; a detection unit configured to detect scattered light in a plurality of directions, which is generated from the inspection object region; a photoelectric conversion unit configured to convert the scattered light detected by the detection unit into an electrical signal; and a signal processing unit configured to process the electrical signal converted by the photoelectric conversion unit to detect a defect in the sample. The detection unit includes a lens array configured to divide an image to form a plurality of images on the photoelectric conversion unit. The signal processing unit is configured to synthesize electrical signals corresponding to the plurality of formed images to detect a defect in the sample.

As a technique to improve processing efficiency of defect inspection by quickly adjusting a position of a detection system, provided is a defect inspection apparatus including: a stage that moves with a sample and a pattern substrate placed thereon; an illumination optical system that irradiates an object on the stage from a direction inclined from the normal direction of the pattern substrate; a first detection optical system that detects scattered light in the normal direction; a second detection optical system that detects scattered light in a direction different from the scattered light detected by the first detection optical system; a signal processing unit that processes both scattered light signals; and a control unit. The control unit implements first adjustment processing of adjusting a focal position of the first or the second detection optical system and a three-dimensional position of each detector with respect to an illumination region by using a scattered light signal and second adjustment processing of adjusting a focal point by changing a position in an optical axis direction of a detector of the first or the second detection optical system and a position in a height direction of the stage, and implements the second adjustment processing at a higher frequency than the first adjustment processing.

Defect inspection apparatus and pattern chip

In a defect inspection device that irradiates a surface of a sample or a surface of a pattern chip with an illumination light shaped to extend in a first direction, and detects a scattered light generated from the surface of the sample or the surface of the pattern chip by the illumination light to detect a defect on the surface of the sample, the pattern chip has a dot pattern area in which multiple dots are arrayed in multiple rows and multiple columns, a minimum interval between the dots corresponding to the lines aligned in the first direction among the multiple dots arrayed in the dot pattern area in a second direction orthogonal to the first direction is smaller than a width of the illumination light, and a minimum interval between the multiple dots arrayed in the dot pattern area is larger than a resolution of the detection optical system.

Defect inspection device, pattern chip, and defect inspection method

A defect inspection apparatus includes: an illumination unit configured to illuminate an inspection object region of a sample with light emitted from a light source; a detection unit configured to detect scattered light in a plurality of directions, which is generated from the inspection object region; a photoelectric conversion unit configured to convert the scattered light detected by the detection unit into an electrical signal; and a signal processing unit configured to process the electrical signal converted by the photoelectric conversion unit to detect a defect in the sample. The detection unit includes an imaging unit configured to divide an aperture and form a plurality of images on the photoelectric conversion unit. The signal processing unit is configured to synthesize electrical signals corresponding to the plurality of formed images to detect a defect in the sample.

Detection can be performed even for a thick inspection target object through time delay integration without degradation of spatial resolution. There is provided an X-ray inspection device configured to include: an X-ray source that generates X-rays; a transport unit that performs transporting a sample; a detecting unit that has a time delay integration type detector which detects X-rays generated by the X-ray source and transmitted through the sample transported by the transport unit; and a defect determining unit that processes a signal obtained by detecting the X-rays transmitted through the sample by the time delay integration type detector of the detecting unit and determines a defect in the sample. The transport unit performs transporting the sample while causing the sample to rotate in synchronization with the transporting when the sample passes in front of the time delay integration type detector of the detecting unit.

X-ray inspection method and X-ray inspection device

A defect observation method for observing a defect on a sample detected by another inspection device with a scanning electron microscope including the steps of: optically detecting the defect using the position information for the defect: illuminating the sample including the defect with an illumination intensity pattern having periodic intensity variation in two dimensions by irradiating a plurality of illumination light beams onto the surface of the sample while phase modulating the light beams in a single direction and successively moving the light beams in small movements in a direction different from the single direction, imaging the surface of the sample that is illuminated by the illumination intensity pattern having periodic intensity variation in two dimensions and includes the defect detected by the other inspection device, and detecting the defect detected by the other inspection device from the image obtained through the imaging of the surface of the sample.

Defect observation method and device and defect detection device

A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

X-ray inspection method and device

A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.

Defect inspection method, low light detecting method, and low light detector

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Yokohama, Japan

Yuta Urano