Shin-etsu Handotai Co., Ltd.

Yuta Tamba

Toru Ishizuka

Eiichi Yamazaki

A method for manufacturing a bonded wafer using a base wafer which is an epitaxial wafer produced by a method including at least one of: (1) setting a chamfer width of a wafer for epitaxial growth to be 0.20 mm or less on an epitaxial growth side; (2) preparing a wafer for epitaxial growth having a rise shape on an epitaxial growth side periphery, thereby adjusting the wafer to have an amount of sag within a range of &#x2212;30 nm/mmto +10 nm/mmon a bonding surface side periphery; and (3) adjusting epitaxial growth conditions so a change in amount of sag before and after growth becomes a positive value, thereby adjusting the wafer to have sag within a range of &#x2212;30 nm/mmto +10 nm/mm. The method can manufacture a bonded wafer with a small terrace width even when an epitaxial wafer is used as the base wafer.

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Nishigo-mura, Japan

Yuta Tamba