Central Glass Company, Limited

Tokyo Electron Limited

Kokusai Electric Corporation

Yuta Takeda

Akifumi Yao

Akiou Kikuchi

Kenji Kameda

Hitoshi Itoh

Isamu Mori

Masaya Nagato

Tomonori Umezaki

Kunihiro Yamauchi

Isao Gunji

Masakiyo Nagatomo

Jun Eto

Yusaku Izawa

Kohei Ooya

A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.

Method for producing tungsten hexafluoride

Disclosed is a purification method for removing a metal component from a fluorine compound gas containing hydrogen fluoride and a metal component. This method includes a removing step for removing the hydrogen fluoride and the metal component therefrom by bringing the fluorine compound gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride. It is preferable for the fluorine compound gas to contain at least one kind selected from the group consisting of CIF, CIF, IF, IF, BrF, BrF, NF, WF, SiF, CF, SFand BF. It is also preferable for the metal fluoride to be an alkali metal fluoride or an alkali earth metal fluoride. Surprisingly, the presence of hydrogen fluoride in a fluorine compound gas makes it possible to remove a metal component therefrom as an impurity as a result of adsorption thereof by a metal fluoride.

Method for purifying fluorine compound gas

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with &#x3b2;-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and &#x3b2;-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to &#x3b2;-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

Dry cleaning method of substrate processing apparatus

Growing community of inventors

Ube, Japan

Yuta Takeda