Rohm Co., Ltd.

Mitsui Minings & Melting Co., Ltd.

Satosen Co., Ltd.

Yuta Okawauchi

Ken Nakahara

Yusuke Nakakohara

Yasuo Kanetake

Tatsuya Miyazaki

Atsushi Yamaguchi

Hirotaka Otake

Mamoru Tsuruya

Takukazu Otsuka

Junichi Kashiwagi

Yohei Moriyama

Yuji Kageyama

Katsuyuki Takahashi

Shinichiro Nagai

Yuuki Ootabara

A semiconductor device includes a first and a second switching element, a first and a second conductive member, and a capacitor. The first switching element has a first element obverse surface and a first element reverse surface facing away from each other in a first direction. The second switching element has a second element obverse surface and a second element reverse surface facing away from each other in the first direction. The first and second conductive members are spaced apart in a second direction orthogonal to the first direction. The capacitor has a first and a second connection terminal. The first and second switching elements are connected in series, forming a bridge. The first and second connection terminals are electrically connected to opposite ends of the bridge. The capacitor and the first switching element are on the first conductive member, the second switching element on the second conductive member.

Semiconductor device with switching elements connected in series

A multilayer capacitor includes a laminate having a first side surface and a second side surface, a first side covering portion covering the first side surface, and a second side covering portion covering the second side surface. The laminate includes first conductor layers, second conductor layers, dielectric layers and insulating layers laminated in the z direction. Each first conductor layer is connected to the first side covering portion and spaced apart from the second side covering portion. Each second conductor layer is connected to the second side covering portion and spaced apart from the first side covering portion. The insulating layers have a lower dielectric strength than the dielectric layers. Each dielectric layer is sandwiched between a first conductor layer and a second conductor layer. The insulating layers include one sandwiched between two first conductor layers and one sandwiched between two second conductor layers.

Multilayer capacitor

An apparatus includes a control device configured to serve as a principal controlling agent in an electric power conversion device incorporating a switching circuit configured to be a bidirectional inverter. The control device is configured to subtract, from a reference signal that is determined in accordance with an operation mode of the electric power conversion device, a multiplied signal obtained by multiplying a control-target current of the switching circuit by a prescribed coefficient to generate, based on a result of the subtraction, a control signal for controlling the bidirectional inverter.

Control device for controlling an electric power conversion device incorporating a bidirectional inverter

A gate drive circuit, which drives a gate of a first transistor, includes a first switch on a high potential side and a second switch on a low potential side connected in series at a second connection node between a high potential end and a low potential end of a series connection structure, constituted of a first voltage source and a second voltage source connected in series at a first connection node; and a third switch and an inductor connected in series between the first connection node and the second connection node. The gate of the first transistor can be electrically connected to the second connection node.

Gate drive circuit

A negative voltage generation circuitincludes a first DC voltage sourcehaving a positive terminal connected to a first node N(Vin), a first diodehaving a cathode connected to a negative terminal of the first DC voltage sourceand an anode connected to an output terminal of a first negative voltage VC(fourth node N), and a first capacitorhaving a first terminal connected to an output terminal of the first negative voltage VCand a second terminal connected to a second node N(Vs_high), so as to supply the first negative voltage VCto a first driverthat performs switching control of a first NMOSFET(first switch element) connected between the first node N(Vin) and the second node N(Vs_high).

Negative voltage generation circuit and power conversion device using same

A ripple injection circuit equipped with: a capacitor that passes a frequency component of an input voltage or a frequency component of an output voltage and that generates a first ripple voltage having a first ripple component; and an integration circuit that integrates a comparison result signal and that generates a second ripple voltage having a second ripple component. The first ripple component and the second ripple component are added to a feedback voltage.

Ripple injection circuit and electronic device equipped with this circuit

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Kyoto, Japan

Yuta Okawauchi