Kioxia Corporation

Kioxia Corporaton

Yuta Kamiya

Kota Takahashi

Kazuhiro Matsuo

Shinji Mori

Kenichiro Toratani

Tomoki Ishimaru

Ha Hoang

Keiichi Sawa

Yuta Saito

Hiroyuki Yamashita

Junichi Kaneyama

Masaya Toda

Takafumi Ochiai

Shoji Honda

Natsuki Fukuda

Shouji Honda

Takashi Kurusu

Ryota Narasaki

Yimin Liu

Takuya Hirohashi

Borong Chen

Akifumi Gawase

Atsuko Sakata

A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

Semiconductor device and semiconductor memory device each having portions of oxide semiconductor between gate insulating layer and electrodes

A method of manufacturing a semiconductor device includes forming a first film including oxygen, forming a second film including nitrogen, etching surfaces of the first film and the second film using a substance including a halogen, and forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, with each of the first processes forming a portion of the third film, and each of the second processes etching a portion of the third film using a substance including a halogen.

Method of manufacturing a semiconductor device with selectively formed nitride film

A semiconductor memory device according to an embodiment includes: a first oxide semiconductor layer between a first conductive layer and a second conductive layer; a first gate electrode; a first electrode; a second electrode; a first capacitor insulating film between the first electrode and the second electrode including a first region and a second region between the first region and the second electrode, concentration of the Ti is higher in the second region than the first region; a third conductive layer; a second oxide semiconductor layer between the third conductive layer and a fourth conductive layer; a second gate electrode; a third electrode; a fourth electrode; and a second capacitor insulating film between the third electrode and the fourth electrode, and including a third region and a fourth region between the third region and the fourth electrode, concentration of Ti is higher in the fourth region than the third region.

Semiconductor memory device

A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

Semiconductor device with adsorption promoting layer

A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

Semiconductor storage device

According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Semiconductor storage device and method for manufacturing semiconductor storage device

Growing community of inventors

Nagoya Aichi, Japan

Yuta Kamiya