Hitachi Chemical Company, Ltd.

Resonac Corporation

Yuta Akasu

Tomohiko Kotake

Tatsuya Makino

Masato Miyatake

Hiroyuki Izumi

Satoshi Takayasu

Takashi Kawamori

Shogo Sobue

Chisato Kikkawa

Emi Miyazawa

Yasuyuki Oyama

A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

Semiconductor device manufacturing method

The present invention provides a barrier material formation composition comprising a silane oligomer, at least a part of the silane oligomer being modified with a metal alkoxide.

Barrier material formation composition, barrier material, production method for barrier material, product, and production method for product

The present invention relates to an aerogel laminated composite having a structure in which a porous spacer layer, an aerogel layer and a support having a heat ray reflective function or a heat ray absorbing function are laminated in this order.

Aerogel laminated composite and thermal insulation material

Growing community of inventors

Tokyo, Japan

Yuta Akasu