Sumitomo Electric Industries, Limited

Sony Corporation

Other

Yusuke Yoshizumi

Masaki Ueno

Takashi Kyono

Yohei Enya

Takamichi Sumitomo

Katsushi Akita

Takao Nakamura

Koji Katayama

Takatoshi Ikegami

Shimpei Takagi

Masahiro Adachi

Shinji Tokuyama

Keiji Ishibashi

Fumitake Nakanishi

Naoki Matsumoto

Hidenori Mikami

Seiji Nakahata

Akihiro Hachigo

Katsunori Yanashima

Yuki Hiromura

Yoshiyuki Yamamoto

Koji Uematsu

Hideki Osada

Takuya Yanagisawa

Yuki Seki

Shugo Minobe

Hiroshi Nakajima

Kunihiko Tasai

Shinsuke Fujiwara

Makoto Kiyama

Hiroyuki Kitabayashi

Takashi Sakurada

Takashi Ishizuka

Kei Fujii

Fuminori Mitsuhashi

Yoshiaki Hagi

Kazuhide Sumiyoshi

Nobuhiro Saga

Suguru Arikata

Takuma Fuyuki

Koji Nishizuka

Sayuri Yamaguchi

A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2&#xd7;10to 4&#xd7;10cm, and has an average dislocation density of 1000 to 5&#xd7;10cmin any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.

Gallium nitride crystal substrate

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 &#x3a9;/sq or less.

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 &#x3bc;m or more. The quantum well light-receiving layer has a carrier concentration of 1&#xd7;10cmor less.

Semiconductor stack, light-receiving device, and method for producing semiconductor stack

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7&#xd7;10, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than &#x2212;10&#xb0; and equal to or smaller than 10&#xb0; in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5&#xd7;10cmor less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5&#xd7;10cmor less.

Layered semiconductor having base layer including GaN substrate

A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d&#x2212;d|/dobtained from a plane spacing dat the X-ray penetration depth of 0.3 &#x3bc;m and a plane spacing dat the X-ray penetration depth of 5 &#x3bc;m is equal to or lower than 1.9&#xd7;10, and the main surface has a plane orientation inclined in the &#x3c;10-10&#x3e; direction at an angle equal to or greater than 10&#xb0; and equal to or smaller than 80&#xb0; with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

Group III nitride semiconductor light emitting device

A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio s/mof a standard deviation sof the thickness of the group III nitride film, to a mean value mof the thickness thereof is 0.001 or more and 0.2 or less, and a ratio s/mof a standard deviation sof an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value mof the absolute value of the off angle thereof is 0.005 or more and 0.6 or less. Accordingly, there is provided a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality.

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device

A group III nitride semiconductor optical devicehas a group III nitride semiconductor substratehaving a main surfaceforming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layerof a quantum-well structure, disposed on the main surfaceof the group III nitride semiconductor substrate, including a well layermade of a group III nitride semiconductor and a plurality of barrier layersmade of a group III nitride semiconductor. The main surfaceexhibits semipolarity. The active layerhas an oxygen content of at least 1&#xd7;10cmbut not exceeding 8&#xd7;10cm. The plurality of barrier layerscontain an n-type impurity other than oxygen by at least 1&#xd7;10cmbut not exceeding 1&#xd7;10cmin an upper near-interface areain contact with a lower interfaceSd of the well layeron the group III nitride semiconductor substrate side.

Group III nitride semiconductor optical device

A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.

Nitride semiconductor laser, epitaxial substrate

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Itami, Japan

Yusuke Yoshizumi