Mitsubishi Electric Corporation

Yusuke Yamashiro

Toshiaki Iwamatsu

Shiro Hino

Tomokatsu Watanabe

Hiroshi Watanabe

Kazuyuki Sugahara

Kohei Ebihara

Kenji Hamada

Kazuya Konishi

Provided is a technique capable of obtaining sufficient latch-up tolerance and enabling integration. The wide band gap semiconductor device includes: a collector region, a charge storage region having an impurity concentration higher than that of the drift region, a base region, a charge extraction region having an impurity concentration higher than that of the base region, an emitter region, a Schottky electrode, a gate insulating film, a gate electrode, an emitter electrode, and a collector electrode.

Wide band gap semiconductor device and power conversion apparatus

In a termination region of a SiC-MOSFET, suppressing operation of a p-n diode between a well and a drift layer sometimes decreases reliability during high-speed switching. In a termination region of a SiC-MOSFET with a built-in SBD are provided second well region having an impurity concentration lower than the impurity concentration in a well region in an active region, and a high-concentration region that is formed on a surface layer of the second well region, has an impurity concentration higher than the impurity concentration in the well region in the active region, and is ohmic-connected to a source electrode.

Silicon carbide semiconductor device and power conversion device

A silicon carbide semiconductor device includes: an n-type drift layerprovided within an SiC layer; a plurality of p-type well regions; a JFET region JR serving as a part of the drift layersandwiched between the well regions; and a gate insulating filmand a gate electrodeat least covering the JFET region JR. The gate insulating filmand the gate electrodeinclude a different-element-containing regioncontaining an element that is different from elements constituting the gate insulating filmand the gate electrode

Silicon carbide semiconductor device and method for manufacturing same

The technique disclosed in the Description relates to a technique preventing dielectric breakdown while a silicon carbide semiconductor device is OFF, without degrading process throughput or yield. The silicon carbide semiconductor device relating to the technique disclosed in the Description includes a drift layer of a first conductivity type, a threading dislocation provided to penetrate the drift layer, and an electric-field reduction region of a second conductivity type disposed in a position in the surface layer of the drift layer, the position corresponding to the threading dislocation. The electric-field reduction region is an epitaxial layer.

Growing community of inventors

Tokyo, Japan

Yusuke Yamashiro