Denso Corporation

Nippondenso Co., Ltd.

Yusuke Watanabe

Kazuhiro Inoguchi

Chikage Noritake

Ichiharu Kondo

Noriyoshi Suzuki

Tatsuya Iwase

Koji Ino

Shoichi Goto

Takashi Yamauchi

Shigeru Ohwaki

Katsushi Iwata

A vehicle direction estimation section estimates an absolute direction of a heading direction of a vehicle based on GPS information and vehicle information. A satellite direction estimation section estimates an absolute direction of a target satellite of several satellites for positioning based on corresponding GPS information, and estimates a relative direction of the target satellite with respect to the heading direction based on the estimated absolute direction of the heading direction and the estimated absolute direction of the target satellite. A shield determination section determines a shielded state of the target satellite by determining whether a signal strength of a satellite signal from the target satellite is greater than a threshold value relative to a target partition of several partitions into which a three-dimensional sphere with respect to the heading direction is divided, the target partition which the calculated relative direction of the target satellite belongs to.

Satellite signal determination apparatus

An apparatus of two stories for manufacturing a non-resonance knock sensor has an assembly body stage positioned at a first floor for forming an assembly body in which a lower insulator, a lower terminal plate, a piezoelectric element, an upper terminal plate and an upper insulator are mounted on a cylindrical base, and process stages positioned at a second floor for fastening the assembly body with a nut to form a sensor main body, bending partly the lower and upper terminal plates of the sensor main body and connecting by welding a resistor between the lower and upper terminal plates which are partly bent in the sensor main body. Accordingly, its manufacturing line is compact and can be installed in smaller horizontal ground area.

Apparatus for manufacturing non-resonance knock sensor

Two electroluminescent substrates, each emitting light having different color, are laminated and bonded together with adhesive layer interposed therebetween. An insulation film such as an epoxy film is placed between two substrates and deformed into an adhesive layer under pressure and heat. The adhesive layer serves as a bonding material and a humidity-protection layer as well. Electrical connection between electrodes of the electroluminescent substrates and outside driving circuits is made at the same time two substrates are bonded by the adhesive layer by bonding wiring sheets together. To further improve the humidity-protection ability of the adhesive layer, the surface of the electroluminescent substrates may be covered by resin which is hardened by radiating ultraviolet light at the same time the insulation film is deformed into the adhesive layer. Thus, the electroluminescent display panel having two substrates can be manufactured in a simple and inexpensive manufacturing process.

Manufacturing method of electroluminescent display panel

A probe made of copper and supported by a movable arm via a load cell and a jig has a joining surface having good wettability with solder at the tip end thereof and has a covering portion having poor wettability with the solder around the circumferential periphery. The solder and flux are stuck to the joining surface and the solder is put into contact with a bump electrode to be tested on a substrate in this state. Then, the solder is melted by an induction heating coil and then cooled down and solidified to join the bump electrode to be tested to the probe. The bump electrode is broken by pulling up the probe in this state at a constant speed and at the same time the pulling force exerted on the probe is measured by the load cell.

Method and apparatus for testing junction strength of electrode

A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substrate. On the surface of the silicon substrate is formed a metallic film, and on the metallic film is formed an insulating film, and a part of the metallic film is exposed through a contact hole. On the metallic film within the contact hole is formed a barrier metal made of TiN, and on the barrier metal is formed a bonding layer made of Ti. On the bonding layer is formed a bump growing Cu film, and on the bump growing Cu film is formed a bump structure.

Semiconductor device with bump structure

A tensile strength or pull strength testing of a semiconductor bump electrode is measured without mounting a semiconductor chip on a substrate or the like. A probe to be inserted into a semiconductor bump electrode is heated up to a temperature at which a metal of the bump electrode 21 is fused, and then the probe having been heated up to the temperature to fuse the metal of the bump electrode is inserted into the bump electrode so that the metal of the bump electrode is fused. Further, the fused metal of the bump electrode is cooled down together with the probe to solidify the same. Thereafter, the probe fixed within the bump electrode is pulled vertically relative to the bump electrode until the bump electrode breaks. At the time of breakage of the semiconductor bump electrode, the pull force is detected as the pull strength of the bump electrode.

Growing community of inventors

Obu, Japan

Yusuke Watanabe