Toyoda Gosei Co., Ltd.

Toyota Gosei Co., Ltd.

Yusuke Toyoda

Koji Okuno

Motoyuki Tanaka

Kazuki Nishijima

Tetsuya Taki

Masato Aoki

Takumi Narita

Shuhei Yamada

Masanori Ogawa

Mitsuhisa Narukawa

To suppress misalignment when a light-emitting element is mounted on a substrate. On the substrate of a light-emitting device, a through hole is formed passing through so as to notch the side surface of the substrate, and a side surface electrode is formed on the side surface of the through hole. The pattern of a front surface electrode has a first region, a second region being connected to the first region, and a third region being connected to the first region and the second region. The shape of the first region is a rectangle coinciding with the electrode of the light-emitting element, and the longitudinal direction of the rectangle is aligned with the longitudinal direction of the substrate. The second region is formed in a lid shape so as to cover the top of the through hole. The shape of the second region is a trapezoid.

Light-emitting device

A method of manufacturing a light emitting device includes injecting liquid or pasty transparent resin into a sheet forming mold, adding a phosphor to the resin in the mold, centrifugally rotating the mold so as to settle the phosphor included in the resin toward one surface side of the resin, thermally curing the resin so as to form a phosphor sheet, the phosphor sheet including a phosphor layer formed on the one surface side of the resin and a transparent layer formed on an other surface side of the resin, overlaying the phosphor sheet on a light emitting element such that the phosphor layer of the phosphor sheet contacts with a light emitting surface of the light emitting element, mounting the light emitting element with the phosphor sheet overlaid on a board, and flattening a surface of the transparent layer of the phosphor sheet on the light emitting element.

Method of manufacturing light emitting device

A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlGaN (0&#x3c;x&#x3c;1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z&#x3c;x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.

Group III nitride semiconductor light-emitting device

A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

Group III nitride-based compound semiconductor light-emitting device and method for producing the same

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Kiyosu, Japan

Yusuke Toyoda