Canon Kabushiki Kaisha

Yusuke Todo

Hideki Hayashi

Junji Iwata

Keita Torii

A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer, and a structure provided between the first and second semiconductor layers. The semiconductor apparatus further includes a first electrode supported by a first insulating layer, a second electrode supported by a second insulating layer, a first wire bonded to the first electrode through a first opening provided in the first semiconductor layer, and a second wire bonded to the second electrode through a second opening provided in the first semiconductor layer, and an annular member made of a non-insulating material and provided between the first semiconductor layer and the first electrode. A distance from the second semiconductor layer to a first joint between the first electrode and the first wire is longer than a distance from the second semiconductor layer to a second joint between the second electrode and the second wire.

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Kanagawa, Japan

Yusuke Todo