Kioxia Corporation

Yusuke Tanaka

Masumi Saitoh

Kensuke Ota

According to one embodiment, a semiconductor memory device includes a ferroelectric layer and a first semiconductor layer. The first semiconductor layer is electrically connected to a first electrode and a second electrode and includes an n-type oxide semiconductor. A third electrode is opposite the first semiconductor layer. The ferroelectric layer is between the third electrode and the first semiconductor layer. A second semiconductor layer includes at least one of a Group IV semiconductor material or a p-type oxide semiconductor material. The first semiconductor layer is between the ferroelectric layer and the second semiconductor layer.

Growing community of inventors

Kawasaki Kanagawa, Japan

Yusuke Tanaka