Tokyo Electron Limited

Yusuke Takino

Sho Kumakura

Yusuke Yanagisawa

Masanobu Honda

Eiji Suzuki

Maju Tomura

Takayuki Katsunuma

Shinya Ishikawa

Hiroto Ohtake

Akinori Kitamura

Masayuki Kohno

Hironari Sasagawa

Kenta Ono

Yuta Nakane

Yuji Otsuka

Tomiko Kamada

Takayuki Hoshi

Kentaro Yamaguchi

Tomohiko Niizeki

Yutaka Osada

Kentarou Fujita

A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.

Substrate processing method and substrate processing apparatus

An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

Etching method, substrate processing apparatus, and substrate processing system

A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to −40° C. or lower, after the first stage.

Substrate processing method

An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).

Etching method and etching apparatus

An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.

An etching method includes preparing a substrate having a processing target film, multiple core members formed on the processing target film, and a first film covering the multiple core members and the processing target film exposed between the multiple core members; forming a second film on a surface of the first film by a first gas; etching the first film by plasma of a second gas while allowing the second film to be left on a portion of the first film corresponding to a side surface of each core member; and repeating the forming of the second film and the etching of the first film.

In a processing method according to one exemplary embodiment, a first nitrified region of a workpiece is etched. The first nitrified region is provided on a first protrusion made of silicon. The workpiece further has a second protrusion, a second nitrified region, and an organic region. The second protrusion is made of silicon. The second nitrified region contains silicon and nitrogen and is provided on the second protrusion. The organic region covers the first and second protrusions and the first and second nitrified regions. In the processing method, the organic region is partially etched to expose the first nitrified region. Then, a silicon oxide film is formed to cover the surface of an intermediate product produced from the workpiece. Then, the silicon oxide film is etched to expose an upper surface of the first nitrified region. Then, the first nitrified region is isotropically etched.

Processing method

An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.

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Miyagi, Japan

Yusuke Takino