Ricoh Company, Ltd.

Denka Company Limited

Nippon Steel Corporation

National Institute of Advanced Industrial Science and Technology

Denki Kagaku Kogyo Kabushiki Kaisha

Yusuke Takeda

Shintaro Watanabe

Tomohiro Nomiyama

Tsuneo Kurotori

Mie Yoshino

Tsutomu Sasaki

Makoto Obu

Noriyasu Takeuchi

Tohru Nakano

Katsuaki Miyawaki

Sadayuki Iwai

Marina Takamura

Hideki Kosugi

Masaru Miyazaki

Tatsuya Okuzono

Yoshihiko Hotta

Shuji Hirai

Takeshi Iijima

Takeo Tsukamoto

Fumihito Masubuchi

Toshio Kawakubo

Toshio Inada

Seiichi Miyakawa

Kozoh Sudoh

Akira Suzuki

Yasushi Nakazato

Satoshi Muramatsu

Kazuyuki Shimada

Tsukuru Kai

Masanori Suzuki

Yasuo Suzuki

Masahiko Itaya

Yoshihiro Hashimoto

Kunichika Morohoshi

Makoto Kawaguchi

Masayoshi Ichikawa

Fuminori Watanabe

Kunio Hibi

Tetsuya Amano

Akihisa Kajiyama

Hideki Hamatani

Satoshi Maruta

Masakazu Muranaka

Itsuo Ikeda

Keita Kobayashi

Toru Nogiwa

Manabu Kobayashi

Yukio Konagaya

Michihiko Iwamoto

Kotaro Watanabe

Ryozo Nonogaki

Masami Hiramatsu

Taiyo Yamaura

Hiroshi Murata

Yasuhiro Kochi

Tomohisa Katou

Yusuke Toyota

Kazuya Sugita

Kimiharu Tanaka

Masahide Hayashi

Youichi Ueda

Hidenori Kanno

Yuya Tomonaga

A β-sialon phosphor represented by general formula: SiAlON(0<z<4.2) has as a host crystal, a crystal structure identical to that of a β-sialon crystal phase and having a bulk density of 0.80 g/cmor more and 1.60 g/cmor less. Also, a light-emitting element includes the β-sialon phosphor and a semiconductor light-emitting element capable of exciting the β-sialon phosphor.

β-SiAlON phosphor and light-emitting apparatus

A red phosphor represented by general formula: MSiAlN, wherein M is at least one or more elements selected from Mg, Ca, Sr and Ba, and is partially replaced with Eu and has, as a host crystal, a crystal structure identical to that of a CaAlSiNcrystal phase, and the phosphor has a bulk density of 0.70 g/cmor more and 2.30 g/cmor less. There is also provided a light-emitting element including the red phosphor and a semiconductor light-emitting element capable of exciting the red phosphor.

Red fluorescent body and light-emitting device

A phosphor powder composed of α-sialon phosphor particles containing Eu. The phosphor powder has an ammonium ion concentration Cof the phosphor powder of equal to or more than 15 ppm and equal to or less than 100 ppm, which is determined from the following extracted ion analysis. (Extracted Ion Analysis A) 0.5 g of a phosphor powder is added to 25 ml of distilled water in a polytetrafluoroethylene (PTFE)-made container with a lid and held at 60° C. for 24 hours, and then a total mass Mof ammonium ions included in an aqueous solution obtained by removing a solid content from the solution by filtration is determined using ion chromatography. Then, Cis determined by dividing Mby the mass of the phosphor powder.

Phosphor powder, composite, and light-emitting device

A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN, and including a Ca element partially replaced with an Eu element, wherein the phosphor has a median size d50 of 12.0 &#x3bc;m or more and 22.0 &#x3bc;m or less, as measured according to a laser diffraction scattering method, and has a specific surface area of 1.50 m/g or more and 10.00 m/g or less, as measured according to a BET method.

Red phosphor and light emitting device

An &#x3b1;-sialon phosphor particle containing Eu. At least one minute recess is formed on a surface of the &#x3b1;-sialon phosphor particle. The &#x3b1;-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.

Phosphor particle, composite, light-emitting device, and method for producing phosphor particle

A phosphor which has a main crystal phase having the same crystal structure as that of CaAlSiN, wherein the phosphor satisfies conditions of a span value (d90&#x2212;d10)/d50 of 1.70 or less and a d50 of 10.0 &#x3bc;m or less, as represented with d10, d50, and d90 on a volume frequency measured according to a laser diffraction method; wherein the d10, d50, and d90 on a volume frequency in a particle distribution measured are each a measured by loading 0.5 g of a phosphor into 100 ml of a solution of 0.05% by weight of sodium hexametaphosphate mixed in ion exchange water, and subjecting the resultant to a dispersing treatment for 3 minutes with an ultrasonic homogenizer at an oscillation frequency of 19.5&#xb1;1 kHz, a chip size of 20&#x3c6;, and an amplitude of vibration of 32&#xb1;2 &#x3bc;m, with a chip placed at a central portion.

Phosphor and light-emitting device

A phosphor powder composed of &#x3b1;-sialon phosphor particles containing Eu. In a case where an internal quantum efficiency after the phosphor powder is held at 600&#xb0; C. for 1 hour in an air atmosphere is defined as P1 and an internal quantum efficiency after the phosphor powder is held at 700&#xb0; C. for 1 hour in an air atmosphere is defined as P2, P1 is equal to or more than 70% and (P1&#x2212;P2)/P1&#xd7;100 is equal to or less than 2.8%.

The purpose of the invention is to both improve the luminance of a SCASN-based phosphor and achieve deep-color rendering properties. Provided is a red phosphor having a main crystal phase having the same crystal structure as a crystal structure of CaAlSiN, the main crystal phase represented by the general formula MAlSiN, wherein an internal quantum efficiency, as measured when the red phosphor is excited by light having a wavelength of 455 nm, is 71% or more, and M in the general formula represents an element group containing at least three elements selected from Eu, Sr, Mg, Ca, and Ba, the element group containing Eu, Sr, and Ca as essentials, and a Eu content is 4.5 mass % or more and 7.0 mass % or less, a Sr content is 34.0 mass % or more and 42.0 mass % or less, and a Ca content is 0.8 mass % or more and 3.0 mass % or less.

Red phosphor and light emission device

A phosphor powder composed of &#x3b1;-sialon phosphor particles containing Eu. With regard to the phosphor powder, a volume-based median diameter (D) determined by a laser diffraction scattering method is equal to or more than 10 &#x3bc;m and equal to or less than 20 &#x3bc;m, and a diffuse reflectance with respect to light at a wavelength of 600 nm is equal to or more than 93% and equal to or less than 99%.

An &#x3b1;-sialon phosphor particle containing Eu. At least one slit is formed on a surface of the &#x3b1;-sialon phosphor particle. The &#x3b1;-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.

An &#x3b1;-sialon phosphor represented by general formula: MEu(Si,Al)(O,N), where M represents at least one or more elements selected from Li, Mg, Ca, Y and a lanthanoid (excluding La and Ce), 0&#x3c;x, and 0&#x3c;y, where the phosphor includes, as a host crystal, a crystal structure identical to that of an &#x3b1;-sialon crystal phase, and the phosphor has a bulk density of 1.00 g/cmor more and 1.80 g/cmor less. Also provided is a light-emitting element including the &#x3b1;-sialon phosphor and a semiconductor light-emitting element capable of exciting the &#x3b1;-sialon phosphor.

Alpha-Sialon fluorescent body and light-emitting device

A threaded connection for steel pipe is provided that prevents cross-threading and provides good compression load resistance. A threaded connection () includes a pin () and a box (). The male thread stabbing flank () of the pin () includes two male thread stabbing flank portions () and (). The male thread stabbing flank portion () is located farther from the pipe axis (X) of the steel pipe () and has a stabbing flank angle (&#x3b1;1) of &#x2212;10 to 15 degrees. The male thread stabbing flank portion () is located closer to the pipe axis (X) and has a stabbing flank angle (&#x3b1;2) of 20 to 60 degrees. The female thread stabbing flank () of the box () includes two female thread stabbing flank portions () and (). The female thread stabbing flank portion () is located farther from the pipe axis (X) and has a stabbing flank angle (&#x3b1;1) equal to the stabbing flank angle (&#x3b1;1) of the male thread stabbing flank portion (). The female thread stabbing flank portion () is located closer to the pipe axis (X) and has a stabbing flank angle (&#x3b1;2) equal to the stabbing flank angle (&#x3b1;2) of the male thread stabbing flank portion ().

Threaded connection for steel pipe

An object of the present invention is to provide a red phosphor having improved luminance. A further object of the present invention is to provide a light emitting device having higher luminance by using the red phosphor. There is provided a phosphor having the main crystal phase represented by the general formula: MAlSiNin which the M element(s) represent one or more elements selected from the group consisting of Mg, Ca, Sr, and Ba, the main crystal phase being composed of only CaAlSiNor having the same crystal structure as that of CaAlSiN, and some of the M element(s) being substituted with an Eu element, wherein the phosphor contains W (tungsten) in an amount of 3 ppm or more and 500 ppm or less, based on the total mass of the phosphor.

Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiNcrystal as the host crystal, a strontium nitride containing SrN, SrN, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Method for producing phosphor

A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 &#x3bc;m or more and 700 &#x3bc;m or less and a specific surface area of 0.05 m/g or more and 0.30 m/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 &#x3bc;m or less under pressure of 70 MPa or less at a temperature of 1900&#xb0; C. or more and 2400&#xb0; C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cmor more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Silicon carbide powder for producing silicon carbide single crystal and a method for producing the same

Growing community of inventors

Tokyo, Japan

Yusuke Takeda