Sanyo Electric Co., Ltd.

Other

Yasutaka Shimizu

Yusuke Takahashi

Kenichi Shibata

Yasumi Kobayashi

Yasuhiro Hirao

Kuniyuki Matsui

Kousuke Takeuchi

Toshiharu Tanaka

Kosuke Takeuchi

Hiroshi Kayaki

Isao Kiyose

Tateo Kondo

Eizo Fujii

Naoki Tanaka

Hiroshi Okano

Hayatoshi Ihara

Katsumi Hiramatsu

Takeshi Kasahara

A method for manufacturing a solid electrolytic capacitor, capable of joining a bolster member interposed between an anode lead and an anode lead frame to the anode lead frame with good adhesion property and high positional accuracy where a bolster member is obtained from a ladder-shaped frame such that a width of the bolster member in a direction perpendicular to a lead-out direction of an anode lead is larger than a width of an anode lead frame, and the bolster member is aligned with the anode lead frame while being chucked, and then is joined to the anode lead frame.

Solid electrolytic capacitor, and method for manufacturing the same

The invention provides a surface acoustic wave device which has a thin film formed on a surface of a substrate adapted to excite longitudinal wave-type surface acoustic waves, longitudinal wave-type quasi surface acoustic waves or longitudinal wave-type surface skimming bulk waves to thereby give an increased electromechanical coupling coefficient and at the same time minimize the temperature coefficient of delay time. For example, in a surface acoustic wave device having an aluminum thin film formed on a surface of a lithium tantalate substrate, the direction of propagation of longitudinal wave-type quasi surface acoustic waves is (40 deg to 90 deg, 40 deg to 90 deg, 0 deg to 60 deg) as expressed in Eulerian angles and within a range equivalent thereto, and the product of wave number of longitudinal wave-type quasi surface acoustic waves and the thickness of the thin film is at least 1.0, preferably in the range of 1.3 to 2.0. The device provided exhibits higher performance than in the paior art.

Surface acoustic wave device

A surface acoustic wave filter according to the present invention is constructed by connecting in series one or two or more filter functional units each comprising a first surface acoustic wave resonator having input and output terminals connected in series with a signal line and a second surface acoustic wave resonator having input and output terminals one of which is connected to the signal line and the other of which is grounded. The first surface acoustic wave resonator is constituted by one interdigital transducer and a pair of electrically open strip type grating reflectors with the interdigital transducer interposed therebetween, and the second surface acoustic wave resonator is constituted by one interdigital transducer and a pair of electrically short strip type grating reflectors with the interdigital transducer interposed therebetween.

Surface acoustic wave filter including series and parallel interdigital

In a resonator-type surface acoustic wave filter comprising a lithium tantalate substrate, lithium niobate substrate or lithium tetraborate substrate having a cut plane of high velocity, the direction of propagation of surface acoustic waves is set within the range of (40 deg to 90 deg, 40 deg to 90 deg, 0 deg to 60 deg) as expressed in Eulerian angles, and the capacitance Cos of the series resonators and the capacitance Cop of the parallel resonators are set within a predetermined range formulated with the center frequency taken as a parameter. Optimum ranges of the required design parameters are thus clarified to assure the resonator-type surface acoustic wave filter of higher performance.

Surface acoustic wave filter with optimized parallel and series

Surface accoustic wave filter

Surface acoustic wave filter including alternate open and shorted

A surface acoustic wave device adapted to attain a higher acoustic velocity than conventionally by realizing SH waves excitable at a higher frequency than the fundametal mode of Rayleigh waves. Aluminum is sputtered for deposition on the R-plane of a sapphire substrate 1 using a sputter ion source, and at the same time, the R-plane of the substrate 1 is irradiated with a nitrogen ion beam having energy of 50 to 250 eV at a current density of 0.2 to 1.0 mA/cm.sup.2 using an assist ion source to form an aluminum nitride thin film 2 on the R-plane of the substrate 1 with the [00.1] axis of the film tilted with respect to a normal to the substrate.

Acoustic wave device and process for producing same

Growing community of inventors

Higashiosaka, Japan

Yusuke Takahashi