Hitachi Automotive Systems, Ltd.

Hitachi Astemo Ltd.

Yusuke Takagi

Takahiro Shimura

Takeshi Tokuyama

Kinya Nakatsu

Yujiro Kaneko

Shinichi Fujino

Akira Matsushita

Toshiya Satoh

Hiroshi Hozoji

Takanori Ninomiya

Tokihito Suwa

Taku Oyama

Nobutake Tsuyuno

Eiichi Ide

Hiromi Shimazu

Shinji Hiramitsu

Yosei Hara

Masashi Yura

Osamu Ikeda

Kaoru Uchiyama

Hisashi Tanie

Shiro Yamashita

Masanori Miyagi

Hideto Yoshinari

Xudong Zhang

Takashi Kume

Shun Kawano

Takashi Kuboki

Takuma Hakuto

Ko Hamaya

Ryo Terayama

Shota Funato

A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni)Snand having a layer thickness of 1.2 to 4.0 μm is formed at an interface between the Ni-based plated layer and the Sn-based solder.

Semiconductor device with first and second conductors and plated layer and method for manufacturing semiconductor device

Provided is an electric circuit body including: a power semiconductor element; a first conductor plate configured to be connected to one surface of the power semiconductor element; a first sheet-shaped member having a first resin insulation layer and configured to at least cover a surface of the first conductor plate; a sealing material configured to seal each of the power semiconductor element, the first conductor plate, and an end of the first sheet-shaped member; and a first cooling member configured to be adhesively attached to the first sheet-shaped member. In the electric circuit body, the first sheet-shaped member includes: an embedded portion where the end of the first sheet-shaped member is covered with the sealing material; a heat dissipation surface as a region to overlap the surface of the first conductor plate; and a margin as a region between the embedded portion and the heat dissipation surface, the margin is located more inward than the heat dissipation surface, and the embedded portion is located more inward than the margin.

Electric circuit body, power conversion device, and method for manufacturing electric circuit body

A power module includes a first conductor plate to which a first power semiconductor element is bonded, a second conductor plate to which a second power semiconductor element is bonded, the second conductor plate being disposed adjacent to the first conductor plate, a first heat-dissipating member disposed counter to the first conductor plate and the second conductor plate, and a first insulating sheet member disposed between the first heat-dissipating member and the first conductor plate. The first power semiconductor element is disposed at a position at which a first length from an end of the first conductor plate, the end being closer to the second conductor plate, to the first power semiconductor element is larger than a second length from an end of the first conductor plate, the end being far from the second conductor plate, to the first power semiconductor element, and the second length is larger than the thickness of the first conductor plate.

Power module

A power conversion device including: a semiconductor device; a first water channel and a second water channel stacked in a predetermined stacking direction and installed with the semiconductor device interposed therebetween; and a connecting water channel connecting the first water channel and the second water channel, in which the connecting water channel is formed by joining and fixing a joint member joined to the first water channel and the second water channel and a cover member separate from the joint member to each other, the first water channel and the second water channel are joined to the joint member by a joint formed in a plane parallel to the stacking direction, and the cover member covers the joint and is joined and fixed to the joint member.

Power conversion device and method for manufacturing power conversion device

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layerabuts on a heat dissipation surfaceof a circuit body, and a heat dissipation memberabuts on the outside of the thermally conductive layer, which is a side of the heat dissipation surfaceof the circuit body. A fixing memberabuts on a side of the circuit bodyopposite to the heat dissipation surface. A connection memberis penetrated at the respective end portions of the heat dissipation memberand the fixing member. FIG.illustrates a state before a bolt and a nut of the connection memberare tightened. The heat dissipation memberholds a curved shape such that the central portion of the heat dissipation memberprotrudes toward the circuit body. The bolt and the nut of the connection memberare fastened and fixed at both ends of the heat dissipation memberand the fixing memberso as to sandwich the circuit body. The heat dissipation memberis elastically deformed to bring the heat dissipation memberinto close contact with the heat dissipation surfaceof the circuit bodyvia the thermally conductive layer, and surface pressure is applied from the heat dissipation memberto the heat dissipation surface

Power semiconductor device and manufacturing method of power semiconductor device

A power semiconductor module, which is a semiconductor device, includes a semiconductor elementand a lead framethat is disposed to face the semiconductor elementand connected to the semiconductor elementby a solder material. The lead framehas the top surfaceincluding a surface facing the semiconductor element, and the side surfaceconnected to the peripheral edge portionof the top surfaceat a predetermined angle with respect to the top surface. The top surface of the lead frameincludes the solder surfacethat is in contact with the solder materialand the solder resistance surface on which the solder materialis less wettable than on the solder surface. The solder resistance surface is formed to surround the periphery of the solder surface. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Plurality of lead frames for cooling a power device

An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor deviceincludes an element installation conductorincluding a first conductor portionthat is made of metal and is used for installing a power semiconductor element, a second conductor portionthat is made of metal and forms one or more main terminalsfor transmitting a current to the power semiconductor element, and one or more control terminalsfor transmitting a switching control signal to the power semiconductor element, and a third conductor portionthat is made of metal and is provided at a tip portion of the control terminal. In the power semiconductor device, the element installation conductoris formed so that the thickness of the thickest portion of the second conductor portionis thinner than the thickness of the first conductor portion, and the thickness of the thickest portion of the third conductor portionis thinner than the thickness of the thinnest portion of the second conductor portion

Power semiconductor device with an element installation conductor

A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Power semiconductor device and power conversion device

A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member. The connecting member is formed in a curved shape.

Power module, power converter device, and electrically powered vehicle

The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Power semiconductor module

A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

A power converter device includes a double-sided electrode module in which an electrical wiring board and a power semiconductor element are molded with a resin material. The power converter device also includes a heat dissipating base disposed on both sides of the double-sided electrode module and directly contacting cooling medium. The power converter device also includes a module fixture which presses the heat dissipating base in a state of contact with the heat dissipating base. The module fixture is configured to support a circuit board.

The present invention aims to suppress a coolant from bypassing a non-cooling unit without lowering the productivity. The power converter according to the present invention includes: a power semiconductor module; and a flow path forming body having a flow path in which the power semiconductor module is disposed and an opening which is connected with the flow path, wherein the power semiconductor module includes a first fin formed on one surface and a second fin formed on another surface which faces the one surface so as to sandwich the semiconductor element, the flow path forming body has a first coolant control unit and a second coolant control unit which are arranged so as to sandwich the first fin, the first coolant control unit and the second coolant control unit are formed to be overlapped with a region of the power semiconductor module where the first fin is not formed, and a first flow path is formed along the first coolant control unit and the second coolant control unit.

Power converter

An object of the present invention is to provide a power semiconductor module that can secure a satisfactory cooling without expanding the size of a case component. In the power semiconductor module according to the present invention, a frame case includes a front surface, a back surface, and a pair of side surfaces and formed with an opening part in at least one of the front surface and the back surface. A metal base is inserted into the opening part of the frame case. A frame case is provided with a joining part FW to which the peripheral part of the metal base and the peripheral part of the opening part of the frame case are joined. A first concaved part and a second concaved part are formed respectively in each of a pair of side surfaces of the frame case. Each of the concaved parts is prolonged toward an inner side of the frame case from the side surfaces, and includes a bottom surface formed facing the joining part FW side in an intermediate position of the thickness direction of each of the side surfaces.

Power semiconductor module and manufacturing method of power semiconductor module

A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

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Hitachinaka, Japan

Yusuke Takagi