Tokyo Electron Limited

Yusuke Saito

Takashi Tanaka

Mitsuaki Iwashita

Yuichiro Inatomi

Nobutaka Mizutani

Takayuki Toshima

Mitsunori Nakamori

Takehiko Orii

Makoto Muramatsu

Tadashi Iino

Kazuyuki Mitsuoka

Hiroyuki Fujii

Satoru Tanaka

Norihiro Ito

Hiroki Ohno

Minoru Honda

Naoyuki Satoh

Tomohisa Hoshino

Kazutoshi Iwai

Song Yun Kang

Noritaka Uchida

Hisashi Genjima

Akira Ishihara

Masato Hamada

Yoshichika Tokuno

Yuji Murakami

A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.

Substrate treatment method and substrate treatment system

A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

Insulating film forming method, insulating film forming device, and substrate processing system

An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substratewhile rotating the substrate. The substrateis rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate

Adhesion layer forming method, adhesion layer forming system and recording medium

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layerserving as a barrier film on a substrate; baking the first plating layer; forming a second plating layerserving as a barrier film; and baking the second plating layer. A plating layer stacked bodyserving as a barrier film is formed of the first plating layerand the second plating layer

Plating method, plating system and storage medium

A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layerby supplying a catalyst solutiononto a substratehaving a recessto adsorb the catalystA onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrateand an inside of the recessby supplying a rinse liquid; drying the surface of the substrateand the inside of the recess. Further, by supplying a binder solutioncontaining a binderB onto the substrate, the catalystA on the surface of the substrateis bound to the substrateby the binderB.

Catalyst layer forming method, catalyst layer forming system and recording medium

A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layerA on the substrateby performing a vacuum deposition process on the substrate; forming an adhesion layerand a catalyst adsorption layeron the vacuum-deposited layerA of the substrate; and forming a plating layer stacked bodyhaving a first plating layerand a second plating layerwhich function as a barrier film on the catalyst adsorption layerof the substrate. By forming the vacuum-deposited layerA, a surface of the substratecan be smoothened, so that the vacuum-deposited layerA serving as an underlying layer can improve the adhesivity.

A plating apparatuscan perform plating processes by supplying plating liquids onto a surface of a substrate. The plating apparatusincludes a substrate rotating holder configured to hold and rotate the substrate; plating liquid supply unitsandconfigured to supply different kinds of plating liquids onto the surface of the substrate; a plating liquid drain unitconfigured to drain out the plating liquids dispersed from the substratedepending on the kinds of the plating liquids; and a controllerconfigured to control the substrate rotating holder, the plating liquid supply unitsand, the plating liquid drain unit. While the substrateis held and rotated, the plating processes are performed on the surface of the substratein sequence by supplying the different kinds of the plating liquids onto the surface of the substrate

Plating apparatus, plating method and storage medium having plating program stored thereon

Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal nanoparticles and a dispersing agent in a solvent containing water; a first heating process of removing moisture contained at least in the catalytic particle-containing film by heating the substrate to a first temperature; and a second heating process of polymerizing the dispersing agent to have a sheet shape by heating the substrate to a second temperature higher than the first temperature after the first heating process and fixing the catalytic metal nanoparticles on a base layer by covering the catalytic metal nanoparticles with the sheet-shaped dispersing agent.

Pre-treatment method for plating and storage medium

A plating apparatusincludes a substrate holding deviceconfigured to hold and rotate the substrate; a first discharge deviceconfigured to discharge a plating liquid toward the substrateheld on the substrate holding device; and a top platethat is provided above the substrateand has an opening. The first discharge deviceincludes a first discharge unitconfigured to discharge the plating liquid toward the substrate, and the first discharge unitis configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unitis configured to be overlapped with the openingof the top plateat the discharge position.

Plating apparatus, plating method, and storage medium

A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.

Plating apparatus, plating method and storage medium

An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.

Apparatus for plating process

A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.

Cap metal forming method

A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

Liquid treatment apparatus and liquid treatment method

A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.

At first, with a chamber being filled with a first gas, a process liquid is supplied onto a surface of a wafer in the chamber so as to process the surface of the wafer. At this time, the process liquid discharged from the chamber is returned to a process-liquid supplying part. Thereafter, with the chamber being filled with a second gas whose humidity is lower than that of the first gas, a fluid for forming a liquid film is supplied onto the surface of the wafer in the chamber to form a liquid film on the surface of the wafer and to dry the surface of the wafer.

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Nirasaki, Japan

Yusuke Saito