Agc Inc.

Yusuke Ono

Hiroshi Hanekawa

Daijiro Akagi

Hirotomo Kawahara

Takuma Kato

Ryusuke Oishi

Takeshi Okato

Taiga Fudetani

Hiroaki Iwaoka

Shunya Taki

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.

Reflective mask blank for EUV lithography and substrate equipped with conductive film

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nof 5.300 or less and has an extinction coefficient kof 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nof 4.300 or less and has an extinction coefficient kof 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nof 2.500 or more and has an extinction coefficient kof 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Reflective mask blank for EUV lithography and substrate with conductive film

A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

Reflective mask blank, reflective mask, and method for manufacturing reflective mask

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nnm of 5.300 or less and has an extinction coefficient knm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nnm of 4.300 or less and has an extinction coefficient knm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nnm of 2.500 or more and has an extinction coefficient knm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Growing community of inventors

Fukushima, Japan

Yusuke Ono