Kioxia Corporation

Yusuke Okumura

Takahito Nishimura

Genki Kawaguchi

According to one embodiment, a semiconductor memory device includes a plurality of conductive layers, each of the plurality of conductive layers including a first portion, and a second portion that is thicker than the first portion, a first insulator portion that contacts the second portion of a first conductive layer and the second portion of a second conductive layer, and a second insulator portion that contacts the second portion of a third conductive layer, wherein the second portion of the second conductive layer includes a first sub portion arranged with the second portion of the first conductive layer, and a second sub portion provided between the second portion of the first conductive layer and the second portion of the third conductive layer.

Semiconductor memory device

A semiconductor memory device includes a substrate including a first region and a second region arranged in a first direction, conductive layers arranged in a second direction and extending in the first direction, a semiconductor layer disposed in the first region and opposed to the conductive layers, contact electrodes disposed in the second region and electrically connected to the conductive layers, and a first structure connected to a first contact electrode in the contact electrodes and a terrace portion of a first conductive layer in the conductive layers. The first structure includes a first conductive portion, a second conductive portion, and a third conductive portion. The first conductive portion extends in the first direction. The second conductive portion and the third conductive portion are connected to one end portion or the other end portion of the first conductive portion in the first direction and the first conductive layer.

According to one embodiment, a semiconductor memory device includes a substrate, insulating members, first conductive layers, first pillars, and second pillars. The substrate includes a first area, a second area, block regions, and a first dummy block region. The insulating members are arranged at respective boundary portions of the block regions and the first dummy block region. The first conductive layers are partitioned by the insulating members. The first pillars penetrates the first conductive layers in a region where the first area and the block regions overlap. The second pillars penetrates at least one of the first conductive layers in a region where the first area and the first dummy block region overlap.

Growing community of inventors

Yokkaichi, Japan

Yusuke Okumura