Tokyo Electron Limited

Yusuke Okazaki

Yoshinobu Hayakawa

Akira Nakagawa

Disclosed is a substrate processing method configured to prevent the occurrence of a bowing shape to form a hole of a vertical processing shape on a mask layer, and to secure a remaining layer quantity as the mask layer. The substrate processing method receives a wafer W in which a mask layer and an intermediate layer are stacked on a target layer to be processed in a chamber, generates plasma of processing gas in the chamber, performs an etching process on wafer W using the plasma, thereby forming a pattern shape on the target layer to be processed through the intermediate layer and the mask layer. The etching process etches the mask layer by applying excitation power of 500 W for generating plasma, maintaining processing pressure at 5 mTorr (9.31&#xd7;10Pa) or less, and maintain temperature of wafer W in the range of &#x2212;10&#xb0; C. to &#x2212;20&#xb0; C.

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Nirasaki, Japan

Yusuke Okazaki