Sony Corporation

Sony Semiconductor Solutions Corporation

Leland Stanford Junior University

Sony Group Corporation

Yusuke Oike

Masaki Sakakibara

Takafumi Takatsuka

Akihiko Kato

Tadayuki Taura

Mamoru Sato

Hongbo Zhu

Jun Ogi

Takashi Machida

Atsumi Niwa

Yorito Sakano

Yoshiaki Tashiro

Yuri Kato

Koji Ogawa

Atsushi Toda

Masanori Kasai

Ryosuke Matsumoto

Atsushi Okuyama

Yasufumi Miyoshi

Keiichi Nakazawa

Ikuhiro Yamamura

Takahiro Toyoshima

Kazuki Hizu

Yukari Takeya

Atsushi Horiuchi

Keiji Mabuchi

Ryoji Ikegaya

Takahiro Kawamura

Hiroyuki Yamagishi

Shinya Yamakawa

Shinichi Yoshimura

Tomohiro Matsumoto

Naoki Saka

Yukio Tagawa

Yasunori Sogoh

Fumitsugu Suzuki

Yasushi Fujinami

Atsushi Suzuki

Hiroki Sato

Yoshiaki Ito

Akito Sekiya

Hiroyuki Iwaki

Nobutaka Shimamura

Abbas El Gamal

Masahiro Nakamura

Katsumi Honda

Tatsuya Ichikawa

Yu Shiihara

Masaki Sakibara

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

Solid-state imaging element, imaging device, and control method of solid-state imaging element

There is provided an imaging device including a first semiconductor substrate of a first conductivity type that includes a first surface and a second surface on an opposite side from the first surface, a photoelectric conversion unit of a second conductivity type, embedded into the first surface of the first semiconductor substrate, that generates a charge corresponding to an amount of received light by photoelectric conversion, a first charge storage unit and a second charge storage unit of the second conductivity type, embedded in parallel into the second surface of the first semiconductor substrate, that store the charge generated in the photoelectric conversion unit, a first charge transfer unit that transfers the charge from the photoelectric conversion unit to the first charge storage unit, and a second charge transfer unit that transfers the charge from the photoelectric conversion unit to the second charge storage unit.

Imaging device

A signal processing circuit outputs, in a case where a first timing at which a first input signal changes is earlier than or same as a second timing at which a second input signal changes, a first output signal at the first timing and a second output signal at the second timing, and outputs, in a case where the first timing is later than the second timing, the first output signal and the second output signal at the second timing.

Signal processing circuit, signal processing device, and signal processing method using logic circuit

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Solid-state imaging device

There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

Signal processing device and solid-state imaging device

A light-receiving apparatus () includes a counting unit (), a setting unit (), and an acquiring unit (). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Light-receiving apparatus with cycle setting according to illumination categories for updating luminance value

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Imaging device and signal processing device

A signal processing circuit has a plurality of first circuits each including a first-time-length-signal output circuit that outputs a first time-length signal representing a time length between first timing at which a first input signal changes and second timing at which a second input signal changes and a second-time-length-signal output circuit that outputs the first time-length signal as a second time-length signal at timing based on a control signal. The signal processing circuit includes a second circuit that outputs the second time-length signal having the longest time length among a plurality of the second time-length signals output respectively from the plurality of first circuits.

Signal processing circuit, signal processing device, and signal processing method to suppress power consumption

It is an object to extend event signal detection periods. An imaging device according to the present technology includes a solid-state imaging device including a plurality of pixels each including a light-receiving portion that photoelectrically converts incident light to generate an electrical signal and a detection circuit that executes event signal detection by comparing the amount of change in the electrical signal generated by the light-receiving portion with a predetermined threshold value to obtain a detection result, and a control unit that performs control so that different pixels have different timing for an event detection period to cause the detection circuit to execute the event signal detection.

Imaging device with extended event signal detection timing

Light-receiving apparatus with cycle setting according to photon count determinations

Growing community of inventors

Kanagawa, Japan

Yusuke Oike