Semiconductor Energy Laboratory Co., Ltd.

Yusuke Nonaka

Shunpei Yamazaki

Masashi Tsubuku

Tatsuya Honda

Satoshi Seo

Nobuharu Ohsawa

Takahiro Ishisone

Akiharu Miyanaga

Takashi Shimazu

Kengo Akimoto

Noritaka Ishihara

Takatsugu Omata

Takuya Kawata

Hiroki Ohara

Toshiki Sasaki

Masahiro Takahashi

Daisuke Matsubayashi

Masashi Oota

Takayuki Inoue

Hideyuki Kishida

Tsunenori Suzuki

Harue Osaka

Takeyoshi Watabe

Toshihiko Takeuchi

Yuji Egi

Tsutomu Murakawa

Hiroki Komagata

Motomu Kurata

Kazutaka Kuriki

Yoshinobu Asami

Ryo Tokumaru

Hiromi Sawai

Takahisa Ishiyama

Riho Kataishi

Hiroshi Kanemura

Tomoki Hiramatsu

Toshinari Sasaki

Hiromi Seo

Yuta Endo

Mitsuhiro Ichijo

Yuichi Sato

Yasuharu Hosaka

Takashi Hamada

Takashi Hamochi

Yasumasa Yamane

Katsuaki Tochibayashi

Shuhei Yokoyama

Hiroshi Ohki

Tetsunori Maruyama

Ryota Hodo

Yuki Imoto

Ryunosuke Honda

Yoichi Kurosawa

Shota Sambonsuge

Yoshinori Yamada

Tomoyo Kamogawa

Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.

Light-emitting element, light-emitting device, electronic device, and lighting device

A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Semiconductor device

A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Semiconductor device having plurality of insulators

An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (Tlevel) of the first light-emitting material is higher than the Tlevel of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

Light-emitting device comprising first to third light-emitting layers

A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

Semiconductor device and method for manufacturing semiconductor device

To increase emission efficiency of a fluorescent light-emitting element by efficiently utilizing a triplet exciton generated in a light-emitting layer. The light-emitting layer of the light-emitting element includes at least a host material and a guest material. The triplet exciton generated from the host material in the light-emitting layer is changed to a singlet exciton by triplet-triplet annihilation (TTA). The guest material (fluorescent dopant) is made to emit light by energy transfer from the singlet exciton. Thus, the emission efficiency of the light-emitting element is improved.

Growing community of inventors

Atsugi, Japan

Yusuke Nonaka