Ngk Insulators, Inc.

Yusuke Niori

Ryusuke Ushikoshi

Koichi Umemoto

Kazuhiro Nobori

Hiromichi Kobayashi

Toshihiko Honda

Kenji Kawabata

A plasma generating electrode device including a substrate,made of a dense ceramic, and an electrode,buried in said substrate,wherein said electrode,is isolated from a setting face of said substrate,and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer,is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode,is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof

A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a

An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.

Corrosion-resistant member for chemical apparatus using halogen series

A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.

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Inuyama, Japan

Yusuke Niori