Kabushiki Kaisha Toshiba

Yusuke Niki

Keiichi Kushida

Daisuke Miyashita

A semiconductor device includes an amplifier, a slew rate regulating circuit, a detection circuit, and a control circuit. The amplifier is configured to amplify an input signal. The slew rate regulating circuit is configured to regulate the slew rate of the input signal. The detection circuit is configured to detect the slew rate of the input signal along a signal path of the input signal between the slew rate regulating circuit and the amplifier. The control circuit is configured to control the slew rate regulating circuit based on a detection result of the detection circuit.

Semiconductor device and communication module

A semiconductor memory device includes a memory cell, a pair of local bit lines connected to the memory cell, first and second transistors, one end of the current channel of each connected to a power supply and the other end of the current channel of each connected to one of the local bit lines, third and fourth transistors, one end of the current channel of each connected to one of the local bit lines, the other end of the current channel of each connected to one of the global bit lines, fifth and sixth transistors, one end of the current channel of each connected to one of the global bit lines and the other end of the current channel of which connected to the power supply. The device further includes a control unit configured to control the transistors.

Semiconductor memory device

A bias current circuit controls an oscillator that generates an oscillation signal of a frequency corresponding to an input current. The circuit includes a part that detects fluctuation of a control current for variably controlling the frequency of the oscillation signal and a part that generates an input current in which a fluctuation component of the control current is canceled using a current for cancelling the detected fluctuation of the control current.

Bias current circuit and semiconductor integrated circuit

An SRAM cell includes one pair of drive transistors, one pair of load transistors, one pair of write access transistors, one pair of read drive transistors, and one pair of access transistors. A voltage source potential is supplied to drains of the read drive transistors.

Growing community of inventors

Tokyo, Japan

Yusuke Niki