Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Yusuke Naniwa

Hideki Muto

Yukiya Yamaguchi

Morio Takeuchi

Motoji Tsuda

Masakazu Tani

Atsushi Horita

Jin Yokoyama

Hiroyuki Kani

Sho Matsumoto

Takashi Watanabe

Syunsuke Kido

Hiroshi Nishikawa

Akiko Itabashi

Shun Harada

To provide a radio-frequency module and a communication apparatus that are capable of suppressing degradation in filter characteristics while reducing the sizes of the radio-frequency module and the communication apparatus. A radio-frequency module () includes a common terminal, a first filter (), a second filter (), a mounting substrate (), and an external connection terminal (). The first filter () is connected to the common terminal and transmits a first signal in a first frequency band. The second filter () is connected to the common terminal and transmits a second signal in a second frequency band. The mounting substrate () has the first filter () mounted thereon. The first filter () is connected to the mounting substrate () with the external connection terminal (). The second filter () is laminated on the first filter (). The external connection terminal () is the common terminal.

Radio-frequency module and communication apparatus

A multiplexer includes first, second, and third filters with first, second, and third frequency bands different from each other, a first connection point connected to a common terminal, a second connection point connected to one end of the first filter and one end of the second filter, a first switch that switches connection and disconnection between the first and second connection points, a reactance element whose one end is connected to a signal path connecting the second connection point and the first switch, a second switch that switches connection and disconnection between the other end of the reactance element and the first connection point, and a third switch that switches connection and disconnection between one end of the third filter and the first connection point. The first and second frequency bands are adjacent to each other among the first, second, and third frequency bands.

Multiplexer, radio frequency front-end circuit, and communication device

A radio-frequency module includes a switch performing switching of the connection between a common terminal and a selection terminal, a reception filter having a reception band in a band A as a passband, a transmission filter that has a transmission band in a band B as a passband and has an output terminal connected to the selection terminal, a filter that has the transmission band in a band B as an attenuation band and has an input terminal connected to the selection terminal, a reception path which connects the selection terminal and an input terminal of the reception filter and on which the filter is disposed, a bypass path which connects the selection terminal and the input terminal of the reception filter and on which no filter is disposed, and a transmission path which connects the selection terminal and a transmission terminal and on which the transmission filter is disposed.

Radio-frequency module and communication device

A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.

Radio frequency circuit and communication apparatus

A multiplexer includes a common terminal, a first acoustic wave filter having a first frequency band as a pass band, and having a first input/output terminal connected to the common terminal, a second acoustic wave filter having a second frequency band higher than the first frequency band as a pass band, and having a second input/output terminal connected to the common terminal, an inductance element, and a first capacitance element. The first acoustic wave filter has a parallel resonator of which one end is connected to the first input/output terminal and another end is connected to a ground electrode, and the first input/output terminal is connected to the common terminal via the inductance element, and the first capacitance element is connected between a signal path between the one end of the parallel resonator and the inductance element, and a ground electrode.

Multiplexer, high-frequency front-end circuit, and communication device

A radio-frequency module includes a transmission path which has one end connected to a transmission terminal and on which a transmission signal in Band A is transmitted; a reception path () which has one end connected to a reception terminal (B) and on which a reception signal in Band B is transmitted; a reception path () which has one end connected to a reception terminal (C) and on which a reception signal in Band C is transmitted; a switch () having a common terminal () and selection terminals (and); and a switch () having a common terminal () and selection terminals (and).

A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.

A radio-frequency module includes a substrate, a first circuit arranged on the substrate and includes a first amplifier for amplifying a diversity signal, and a second circuit arranged on the substrate and includes a second amplifier for amplifying a MIMO signal. The first amplifier and the second amplifier are formed on a single component and are arranged in a central portion in a plan view of the substrate. The first circuit and the second circuit may include a first matching element connected to the first amplifier and a second matching element connected to the second amplifier, respectively. The first amplifier and the second amplifier may be arranged in the central portion on a first main surface of the substrate. The first matching element and the second matching element may be arranged in the central portion on a second main surface of the substrate.

An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

Switch IC, high-frequency module, and communication apparatus

A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.

Semiconductor device, radio-frequency circuit, and communication apparatus

A front-end module includes a module board, a reception filter mounted on the module board, a reception low-noise amplifier mounted on the module board, and an inductor incorporated in the module board and connected to a path linking the reception filter and the reception low-noise amplifier. The inductor includes an inductor board. At least part of the inductor overlaps at least part of the reception low-noise amplifier in plan view.

Front-end module and communication apparatus

A radio frequency module includes a first receive circuit that processes a receive signal in the first frequency band. The first receive circuit includes a first substrate, a first low noise amplifier, and a first filter circuit. The first low noise amplifier is mounted on a principal surface of the first substrate. The first filter circuit is connected to an output end of the first low noise amplifier. At least a portion of the first filter circuit is provided on the principal surface of the first substrate. The first filter circuit attenuates spurious components occurring due to a transmit signal in the first frequency band received by the first low noise amplifier. The spurious components are included in the transmit signal in the first frequency band and have a frequency bandwidth that overlaps, includes, or is included in the frequency bandwidth of the receive signal in the second frequency band.

Growing community of inventors

Kyoto, Japan

Yusuke Naniwa