Oki Data Corporation

Honda Motor Co., Ltd.

Oki Electric Industry Co., Ltd.

Mitsubishi Materials Corporation

Bridgestone Corporation

Yusuke Nakai

Hironori Furuta

Hiroyuki Fujiwara

Takahito Suzuki

Mitsuhiko Ogihara

Tomoki Igari

Tomohiko Sagimori

Toru Kosaka

Chihiro Takahashi

Masafumi Ito

Masahiko Asanuma

Kenichi Tanigawa

Takuma Ishikawa

Shinya Jyumonji

Hiroto Kawada

Yuuki Shinohara

Koji Nagamizu

Koyuru Horiike

Hiroyuki Terunuma

Akihisa Koga

Akinori Kimura

Taito Kobayashi

Masafumi Itoh

Susumu Mashio

Naoki Deguchi

Fumitaka Kobayashi

Akihiro Ogata

Yoshihiro Ishibashi

Nobuyuki Otani

Takahiro Shikazaki

Hideomi Yoshida

Hiroyuki Kosumi

Takahiro Ito

Genichirou Matsuo

Genichiro Matsuo

A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Semiconductor element unit and method of manufacturing thereof, semiconductor element unit supply substrate, and semiconductor packaging circuit and method of manufacturing thereof

A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Composite integrated film, composite integrated film supply wafer, and semiconductor composite device

Tire tread

A vehicle body front structure () includes: a shutter mechanism (), an under cover (), and a cooling duct (). The shutter mechanism includes an upper shutter () and a lower shutter (). The under cover covers a power device, a cooling device, and a peripheral component from below. Air is sent from the lower shutter to the cooling duct, and the cooling duct includes: an intake port portion (), a first discharge port portion (), and a second discharge port portion (). Air is sent from the lower shutter to the intake port portion. The first discharge port portion and the second discharge port portion are positioned at the back of a vehicle body of the power device, and send air toward the peripheral component.

Vehicle body front structure

A speed change device for a motorcycle has a lost motion mechanism associated with a shift rod of a link mechanism that transmits an operating force applied to a shift operating member to a shift spindle. The speed change device is provided with a shift stroke sensor that detects an amount of expansion/contraction stroke of the shift rod and with a shift spindle sensor that detects rotation of the shift spindle. Further provided is an output control device that controls the output of an internal combustion engine on the basis of detection signals of the shift stroke sensor and the shift spindle sensor. The shift spindle has a detection-target recessed portion formed by recessing a part of a cylindrical outer circumferential surface of the shift spindle. The shift spindle sensor detects the rotation of the shift spindle in cooperation with the detection-target recessed portion.

Speed change device for motorcycle

The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release.

Display apparatus

A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.

Light emitting panel having a plurality of light emitting element arrays arranged in descending order of wavelength

A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of the two or three three-terminal light emitting elements. The lead-out wiring portion includes wirings led from the common layer and the plurality of three-terminal light emitting elements and extending in a direction substantially perpendicular to an arranging direction of the plurality of three-terminal light emitting elements.

Semiconductor device, optical print head and image forming apparatus

A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer.

Semiconductor light emitting apparatus and optical print head

The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LEDis accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED

Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Efficient light emitting semiconductor device

A sludge receiving facility is provided with upper and lower structures respectively having inner spaces communicating with each other, wherein sludge tanks each having a sludge charging port are provided in the lower structure, and a partition wall configured to partition a carrying-in space of the upper structure from the inner space is provided, the sludge receiving facility including: outside air blowing means; air circulating means configured to enable the inner space and the carrying-in space to communicate with each other; first exhausting means configured to exhaust air from an upper part of the carrying-in space; second exhausting means configured to exhaust air above the sludge charging port; and third exhausting means configured to exhaust air inside the sludge tanks, wherein opening/closing means are respectively provided in the circulating means and the first to third exhausting means.

Ventilation system of sludge receiving facility

A wet sludge disposal facility is capable of smoothly transferring wet sludge to a kiln inlet part of a dry process kiln by a low feeding pressure and without substantially increasing the moisture content in the wet sludge. The disposal facility is used in a cement clinker manufacturing facility having a preheater for preheating a cement raw material, and a dry process kiln connected to the preheater at the kiln inlet part of the dry process kiln. Wet sludge is transferred to the side of the kiln inlet part by feeding water between the wet sludge and the inner wall surface of the pipe by a water injection apparatus in at least one place between the pressure feed pump and the kiln inlet part.

Method and facility for disposing wet sludge

An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Method of manufacturing by etching a semiconductor substrate horizontally without creating a vertical face

Growing community of inventors

Tokyo, Japan

Yusuke Nakai