Omron Corporation

Yusuke Nakagawa

Takashi Kasai

Toshiyuki Takahashi

Tadashi Inoue

Yasuhiro Horimoto

Yoshitaka Tatara

A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The pressure relief hole and the protrusion have a gap therebetween defining an airflow channel as a pressure relief channel. The protrusion has a through-hole extending from a distal portion of the protrusion to a portion of the back plate opposite to the protrusion.

Capacitive transducer and acoustic sensor

A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.

Capacitance type sensor and method of manufacturing the same

A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.

Method for manufacturing semiconductor device and method for manufacturing microphone

Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposeris mounted on a top surface of a circuit board, and an acoustic sensoris mounted on the top surface thereof. A signal processing circuitis accommodated in a spaceprovided in the interposer, and mounted on the circuit board. The acoustic sensoris connected to the circuit boardthrough a wiring structure provided in the interposer. The acoustic sensor, the interposerand the like are covered by a coverput on the top surface of the circuit board. In the cover, a sound introduction holeis opened in a position opposed to the front chamber of the acoustic sensor. The interposeris formed with a ventilation notchfor acoustically communicating a space below a diaphragmof the acoustic sensorwith a space inside the coverand outside the interposer

Growing community of inventors

Kyoto, Japan

Yusuke Nakagawa