Tokyo Electron Limited

Sumitomo Osaka Cement Co., Ltd.

Yusuke Nakagawa

Yasuharu Sasaki

Nobuyuki Nagayama

Mamoru Kosakai

Takehiro Ueda

Taketoshi Okajo

Sungtae Lee

Jun Yashiro

A seal mechanism that can prevent the occurrence of corrosion and abnormal discharge. The seal mechanism is disposed between first and second structural members having opposing surfaces. A first seal trench and a second seal trench are formed respectively in a first opposing surface of the first structural member and in a second opposing surface of the second structural member. A first seal member and a second seal member are housed respectively in the first and second seal trenches. The first seal member and the second seal member are brought into pressure contact with each other. These seal trenches have a first seal surface and a second seal surface from which aluminum is exposed, and further have first shut-off surface disposed between the first opposing surface and the first seal surface and a second shut-off surface disposed between the second opposing surface and the second seal surface. The first seal member has a first covering portion that covers the first shut-off surface, and the second seal member has a second covering portion that covers the second shut-off surface.

Seal mechanism, seal trench, seal member, and substrate processing apparatus

A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber.

Deposit removing method and substrate processing method

A cleaning method that can prevent abnormal wear of an O-ring. A cleaning gas containing at least oxygen gas is supplied to the interior of a chamber in which a substrate is accommodated, and radio-frequency voltage is applied to the interior of the chamber to produce oxygen radicals from the cleaning gas. When the amount of deposit produced in the chamber in plasma processing is larger than a predetermined amount, the amount of fluorine radicals in the chamber is increased, and when the amount of the deposit is smaller than the predetermined amount, the amount of fluorine radicals in the chamber is decreased.

Cleaning method and substrate processing apparatus

An electrostatic chuck capable of widening a temperature range and reducing a variation in thermal conductivity between the electrostatic chuck and the flat substrate over time is provided. The chuck includes: a body that has an internal electrode for attracting a flat substrate by an electrostatic force provided therein, a plurality of protrusions formed on one surface of the body serving as an electrostatic attraction surface, and projections provided on the top surfaces of some or all of the plurality of protrusions. In the electrostatic chuck, a region of the top surface of each of the minute projections on which the flat substrate is loaded is referred to as a mounting surface, and the total area of the mounting surfaces of the minute projections is equal to or larger than 0.01% and equal to or smaller than 2% of the area of the electrostatic attraction surface.

Growing community of inventors

Nirasaki, Japan

Yusuke Nakagawa