Other

Matsushita Electric Industrial Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Panasonic Corporation

Ngk Insulators, Inc.

Mitsubishi Denki Kabushiki Kaisha

Toyoda Gosei Co., Ltd.

Japan Science and Technology Agency

Osaka University

Yusuke Mori

Mori, Yusuke

Takatomo Sasaki

Fumio Kawamura

Yasuo Kitaoka

Isao Kidoguchi

Hisashi Minemoto

Masashi Yoshimura

Yasuhito Takahashi

Mototaka Taneya

Ryu Hirota

Tatsuya Morioka

Masaya Ishida

Daisuke Hanaoka

Yoichi Kawakami

Shigeo Fujita

Masafumi Harada

Seiji Nakahata

Makoto Iwai

Hidekazu Umeda

Masanori Morishita

Akihiko Ishibashi

Katsuhiro Imai

Shiro Yamazaki

Tetsuo Kojima

Shuichi Fujikawa

Koji Yasui

Koji Hirata

Shuhei Higashihara

Mamoru Imade

Susumu Konno

Muneyuki Nishioka

Takashi Saji

Yuji Yamada

Naoya Miyoshi

Yasunori Kai

Satoru Fukumoto

Tomoyo Matsui

Yumiko Mizuno

Kinya Uchihashi

Seiji c/o Itami Works Of Sumitomo Electric Ind Ltd Nakahata

Ryu c/o Itami Works Of Sumitomo Electric Ind Ltd Hirota

Ryu c/o Itami Works Hirota

Seiji c/o Itami Works Nakahata

Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphorescent portion, and method of producing the same

A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in.

Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby

A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

Method for preparing borate-based crystal and laser oscillation apparatus

Light-emitting apparatus, phosphor and method of producing it

The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

Method for producing semiconductor crystal

The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

Method for producing compound single crystal and production apparatus for use therein

A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material () and gas containing nitrogen are introduced into a reactor vessel (), to which heat is applied by a heater (), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device () to the reactor vessel () through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel () through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel () without passing through the pressure-resistant vessel (), the mixture of impurities attached to the pressure-resistant vessel () and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (). As a result, the quality of Group III nitride crystals obtained can be improved.

The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5&#xd7;1.013&#xd7;10Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NHand N.

Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlGaInN (where 0&#x2266;s&#x2266;1, 0&#x2266;t&#x2266;1, and s+t&#x2266;1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AlGaInN (where 0&#x2266;u&#x2266;1, 0&#x2266;v&#x2266;1, and u+v&#x2266;1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.

Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same

The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P(atm(&#xd7;1.013&#xd7;10Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I):&#x3c;(+45),&#x2003;&#x2003;(I)where in the expression (I), P (atm(&#xd7;1.013&#xd7;10Pa)) denotes the minimum pressure that is required for generating GaN crystals at a temperature T&#xb0; C. of the mixed melt.

Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same

There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

Method of manufacturing group-III nitride crystal

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Katano, Japan

Yusuke Mori