Osaka University

Ngk Insulators, Inc.

Toyoda Gosei Co., Ltd.

Sumitomo Chemical Company, Limited

Osaka Industrial Promotion Organization

Mitsubishi Electric Corporation

Disco Corporation

Sciocs Company Limited

Yusuke Mori

Takatomo Sasaki

Fumio Kawamura

Makoto Iwai

Masashi Yoshimura

Takanao Shimodaira

Katsuhiro Imai

Yasuo Kitaoka

Shiro Yamazaki

Shiro Yamasaki

Mamoru Imade

Masayuki Imanishi

Shuhei Higashihara

Takehiro Yoshida

Mikiya Ichimura

Masatomo Shibata

Seiji Nagai

Koji Hirata

Takayuki Sato

Hiroaki Adachi

Masanori Morishita

Kazufumi Takano

Mihoko Hirao

Hiroshi Morikazu

Tsuyoshi Inoue

Naoki Shibata

Junichi Nishimae

Tetsuo Kojima

Hidekazu Umeda

Tomotaka Katsura

Chikashi Ihara

Tomoya Iwahashi

Yoshihiko Yamamura

Takumi Shotokuji

Yasuhide Yakushi

Shin Tabata

Minoru Kawahara

Muneyuki Nishioka

Hiroyoshi Matsumura

Shigeru Sugiyama

Kunimichi Omae

Hiroshi Masuhara

Youichiroh Hosokawa

Ryota Murai

Masateru Kurata

Hiroshi Yoshikawa

Satoshi Nakayama

Yoshinori Takahashi

Satoshi Murakami

There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1&#xd7;10cmin a crystal near the principal surface over an entire in-plane region thereof.

Method for manufacturing group-III nitride semiconductor crystal substrate

There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

Method for manufacturing nitride crystal substrate and substrate for crystal growth

The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer () as seed crystals for generation and growth of Group III nitride crystals (); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals () grown from the plural seed crystals by the growth of the Group III nitride crystals () are bound.

Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device

The present invention provides a target substance transfer method, a crystal production method, a composition production method, and a target substance transfer device, which allow the concentration of a target substance to be increased easily and effectively. The target substance transfer method is a method for transferring a target substancefrom a first phasethat is a liquid or solid phase containing the target substanceto a second phaseincluding: a phase approximation step of bringing the first phaseand the second phaseinto close proximity; and a bubble collapse step of forming bubbles in the vicinity of a boundary between the first phaseand the second phaseand then causing the bubbles to collapse.

Target substance transfer method, crystal production method, composition production method, and target substance transfer device

The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

Nitride single crystal manufacturing apparatus

A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

Process for producing a nitride single crystal and apparatus therefor

It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal

A nitride single crystal is produced on a seed crystal substratein a melt containing a flux and a raw material of the single crystal in a growing vessel. The meltin the growing vesselhas temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

Method for manufacturing nitride single crystal

An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

N-type group III nitride-based compound semiconductor and production method therefor

An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Method for producing group III nitride semiconductor

A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vesselset in a non-oxidizing atmosphere to thereby produce a solidified matter. The reaction vesseland the solidified matterare heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

Process for producing single crystal

It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

Apparatus for producing nitride single crystal

A GaN single crystalis grown on a crystal growth surface of a seed crystal (GaN layer) through the flux method in a nitrogen (N) atmosphere at 3.7 MPa and 870&#xb0; C. employing a flux mixture including Ga, Na, and Li at about 870&#xb0; C. Since the back surface of the templateis R-plane of the sapphire substrate, the templateis readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the templateis gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystalis grown to a sufficient thickness, for example, about 500 &#x3bc;m or more, the temperature of the crucible is maintained at 850&#xb0; C. to 880&#xb0; C., whereby the entirety of the sapphire substrateis dissolved in the flux mixture.

Method for producing group III nitride-based compound semiconductor crystal

A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG., a non-polar surface can be grown.

GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus

Growing community of inventors

Suita, Japan

Yusuke Mori