Mitsubishi Electric Corporation

Yusuke Miyata

Yutaka Fukui

Rina Tanaka

Katsutoshi Sugawara

Hideyuki Hatta

Hidenori Koketsu

Kenji Suzuki

Yuki Haraguchi

Takuya Yoshida

Akira Kiyoi

Haruhiko Minamitake

Taiki Hoshi

The present invention relates to a semiconductor device having trench gates. The semiconductor device includes the following: a first semiconductor layer; a first semiconductor region selectively disposed in the upper layer of the first semiconductor layer; a second semiconductor region in contact with the first semiconductor region; a third semiconductor region on the bottom surfaces of the first and second semiconductor regions; gate trenches provided to penetrate the first and third semiconductor regions in the thickness direction of the first and third semiconductor regions to reach the inside of the first semiconductor layer; a field-reducing region on the bottom of each gate trench; and connection layers arranged in the first semiconductor layer at intervals so as to be each in contact with at least one of sidewalls of the gate trenches, the connection layers each electrically connecting the field-reducing region to the third semiconductor region.

Semiconductor device and power converter

A semiconductor device according to the present disclosure includes: a first conductivity-type silicon substrate including a cell part and a termination part surrounding the cell part in plan view; a first conductivity-type emitter layer provided on a front surface of the silicon substrate in the cell part; a second conductivity-type collector layer provided on a back surface of the silicon substrate in the cell part; a first conductivity-type drift layer provided between the emitter layer and the collector layer; a trench gate provided to reach the drift layer from a front surface of the emitter layer; and a second conductivity-type well layer provided on the front surface of the silicon substrate in the termination part. Vacancies included in a crystal defect in the cell part are less than vacancies included in a crystal defect in the termination part.

Semiconductor device and manufacturing method therefor

A drift layer is made of silicon carbide and has a first conductivity type. At least one trench has a first side surface facing a Schottky barrier diode region, and a second side surface extending in a transistor region and contacting a source region, a body region, and the drift layer. A first protective region is provided under the at least one trench, has a second conductivity type, and is higher in impurity concentration of the second conductivity type than the body region. A second protective region extends from the first protective region, reaches at least one of the first side surface and an end region of the second side surface continuous with the first side surface, has an uppermost portion shallower than a lowermost portion of the body region, and is higher in impurity concentration of the second conductivity type than the body region.

Silicon carbide semiconductor device and method of manufacturing same

A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type. A gate insulating film is on each inner wall of at least one trench. A protective layer has at least a portion below the trench, is in contact with the drift layer, and has the second conductivity type. A first low-resistance layer is in contact with the trench and the protective layer, straddles a border between the trench and the protective layer in the depth direction, has the first conductivity type, and has a higher impurity concentration than the drift layer. A second low-resistance layer is in contact with the first low-resistance layer, is away from the trench, has the first conductivity type, and has a higher impurity concentration than the first low-resistance layer.

Silicon carbide semiconductor device and manufacturing method of same

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Tokyo, Japan

Yusuke Miyata