Kyocera Corporation

Yusuke Miyamichi

Shoei Sato

Keita Kurosu

Rui Kamada

Satoshi Kitayama

Shuji Nakazawa

Shintaro Kubo

Toshiki Matsuoka

Tatsuya Domoto

Yuji Asano

A photovoltaic module includes a front protective layer, a back protective layer, a plurality of solar cells, and a filler. The front protective layer is transmissive to light and has a first surface and a second surface opposite to the first surface. The back protective layer faces the second surface. The plurality of solar cells are between the second surface and the back protective layer. The filler is between the front protective layer and the plurality of solar cells and covers the plurality of solar cells. The filler includes a material with a chemical structure to generate a free acid. The front protective layer includes a weather-resistance resin. At least a part of the first surface is exposed to a space external to the photovoltaic module.

Photovoltaic module

A solar cell module includes a resin first protective layer being light transmissive, a second protective layer, a solar cell portion, a resin first filler layer, a resin second filler layer, a substrate, and an adhesive layer. The solar cell portion includes solar cell elements between the protective layers. The first filler layer facing the first protective layer covers the solar cell elements. The second filler layer facing the second protective layer covers the solar cell elements. The adhesive layer bonds the second protective layer and the substrate. The first protective layer is softer than the substrate. One or more of the second filler layer, the second protective layer, and the adhesive layer have a higher Young's modulus than the first filler layer.

Solar cell module

In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Photoelectric conversion device

The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

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Hikone, Japan

Yusuke Miyamichi