Flosfia Inc.

Yusuke Matsubara

Takashi Shinohe

Mitsuru Okigawa

Osamu Imafuji

Yasushi Higuchi

Hiroyuki Ando

Hideki Takehara

Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

Semiconductor element and semiconductor device

Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

Multilayer structure and semiconductor device

Growing community of inventors

Kyoto, Japan

Yusuke Matsubara