Shindengen Electric Manufacturing Company Limited

Honda Motor Co., Ltd.

Yusuke Maeyama

Shunichi Nakamura

Yoshiyuki Watanabe

Akihiko Shibukawa

Ryohei Osawa

Atsushi Ogasawara

Hideki Hashimoto

Koichi Nishikawa

Ken-ichi Nonaka

Yusuke Fukuda

Seiichi Yokoyama

Masaaki Shimizu

Yoshimitsu Saito

Hiroaki Iwakuro

Kensuke Iwanaga

Jin Onuki

Yoshitaka Araki

A wide gap semiconductor device has a wide gap semiconductor layer; and a metal electrodedisposed on the wide gap semiconductor layer. The metal electrodehas a monocrystalline layerhaving a hexagonal close-packed (HCP) structure in an interface region between the metal electrodeand the wide gap semiconductor layer. The monocrystalline layerhas a specific element-containing regioncontaining O, S, P or Se.

Wide gap semiconductor device

A semiconductor device includes: a drift layer of a first conductivity type which is made of silicon carbide; a junction region formed on one main surface of the drift layer; a junction termination extended region of the drift layer, the junction termination extended region being formed outside the junction region when the one main surface is viewed in plan view, and the junction termination extended region containing an impurity of a second conductivity type opposite to the first conductivity type; and a guard ring region of the drift layer, the guard ring region being formed at a position overlapping the junction termination extended region when the one main surface is viewed in plan view, and the guard ring region containing the impurity of the second conductivity type with a concentration that is higher than that of the junction termination extended region, wherein in the junction termination extended region, the concentration of the impurity of the second conductivity type in a depth direction from the one main surface increases from the one main surface down to a first depth, and the concentration of the impurity of the second conductivity type at the one main surface is one tenth or less the concentration of the impurity of the second conductivity type at the first depth and is higher than a concentration of an impurity of the first conductivity type of the drift layer.

Semiconductor device and semiconductor device manufacturing method

A wide gap semiconductor device comprises a first conductive-type semiconductor layer (); a second conductive-type region (), () that is provided on the first conductive-type semiconductor layer (); a first electrode (), of which a part is disposed on the second conductive-type region (), () and the other part is disposed on the first conductive-type semiconductor layer (); an insulating layer (), (), () that is provided adjacent to the first electrode () on the first conductive-type semiconductor layer () and that extends to an end part of the wide gap semiconductor device; and a second electrode () that is provided between the first electrode () and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer ().

Wide gap semiconductor device and method of manufacturing the same

A method for manufacturing a semiconductor device includes forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150&#xb0; C. or above in a gas atmosphere including nitrogen and oxygen, and introducing highly-concentrated nitrogen to one surface of the SiC substrate while forming the thermal oxide film; forming a highly-concentrated n-type SiC layer on one surface of the SiC substrate such that the thermal oxide film is removed from one surface of the SiC substrate by etching and, thereafter, one surface of the SiC substrate is exposed to radicals so that Si&#x2014;N bonded bodies and C&#x2014;N bonded bodies on one surface of the SiC substrate are removed while leaving nitrogen introduced into a lattice of SiC out of highly-concentrated nitrogen introduced into one surface of the SiC substrate; and forming an ohmic electrode layer on one surface of the SiC substrate.

Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film

A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

Schottky barrier diode

A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Method for manufacturing junction semiconductor device

Growing community of inventors

Hanno, Japan

Yusuke Maeyama