Fujitsu Corporation

Yusuke Kumazaki

Naoya Okamoto

Shirou Ozaki

Toshihiro Ohki

Kozo Makiyama

Yoshihiro Nakata

Tsuyoshi Takahashi

Yuichi Minoura

Kenichi Kawaguchi

Naoki Hara

A high-frequency circuit board includes: a first insulating layer having a first dielectric constant; a first metal layer provided to stack over the first insulating layer; a second insulating layer provided to stack over the first metal layer, and having a second dielectric constant lower than the first dielectric constant; a second metal layer provided to stack over the second insulating layer, on which a compound semiconductor device is mounted; and first vias penetrating the second insulating layer and connecting the first metal layer with the second metal layer.

High-frequency circuit board and antenna module

A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Semiconductor device and method for manufacturing semiconductor device

A compound semiconductor device includes a compound semiconductor laminate structure including an electron transit layer and an electron supply layer, a gate electrode, a source electrode, and a drain electrode that are formed over the electron supply layer, a first insulating layer of diamond formed between the gate electrode and the drain electrode over the compound semiconductor laminate structure, and a second insulating layer formed between the gate electrode and the source electrode over the compound semiconductor laminate structure, wherein a positive compressive stress is applied from the first insulating layer to the electron supply layer, and a compressive stress from the second insulating layer to the electron supply layer is smaller than the compressive stress from the first insulating layer to the electron supply layer.

Compound semiconductor device

Growing community of inventors

Atsugi, Japan

Yusuke Kumazaki