Nikon Corporation

Kanagawa University

Yusuke Kawakami

Shohei Koizumi

Takashi Sugizaki

Kazuo Yamaguchi

Kenji Miyamoto

Michiko Itou

Provided is a transistor production method including: forming a gate electrode on an object by using a conductive material; forming an insulating film on the gate electrode; forming a photoresponsive film on the insulating film by using a material containing a compound having a photoresponsive nitrobenzyl group; selectively exposing the photoresponsive film to dissociate the photoresponsive group in an exposed area, forming a pattern including a hydrophilic exposed area and a water-repellent unexposed area, disposing a conductive material in the exposed area to form a source electrode and a drain electrode, and forming a modified layer by subjecting the unexposed area to a plasma irradiation to remove a water-repellent film and further subjecting to a surface treatment; and forming a semiconductor layer on the modified layer.

Transistor production method

A compound represented by Formula (1). [In the formula, X represents a halogen atom or an alkoxy group, Rrepresents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2-1), and a group represented by Formula (R2-2), Rrepresents a group represented by Formula (R2-1) or (R2-2), n0 represents an integer of 0 or greater, n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5.]

Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

What is provided is a compound, a pattern forming substrate, a coupling agent, and a pattern formation method. The compound is represented by Formula (1).

Compound, pattern forming substrate, coupling agent, and pattern formation method

A method for producing a fluorine-containing compound represented by General formula (1), wherein X represents a halogen atom or an alkoxy group, Rrepresents a hydrogen atom or a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, Rand Rare each independently a fluorinated alkoxy group, and n represents an integer of 0 or more. 

Fluorine-containing compound, substrate for patterning, photodegradable coupling agent, patterning method, and compound

What is provided is a pattern forming method for forming a pattern on a surface to be processed of an object, the method including: a first layer forming step of forming a first layer containing a compound having a protective group that is decomposable by an acid and also decomposable by light, on the surface to be processed; a second layer forming step of forming a second layer containing a photoacid generator that is configured to generate an acid by exposure, on the first layer; an exposure step of exposing the first layer and the second layer to form a latent image including an exposed region and an unexposed region, on the first layer; and a disposition step of disposing a pattern forming material in the exposed region or the unexposed region.

Pattern forming method, method for producing transistor, and member for pattern formation

A transistor manufacturing method includes forming a source electrode and a drain electrode on a substrate, forming a layer including an insulator layer to cover the source electrode and the drain electrode, and forming a gate electrode on the layer including the insulator layer, wherein the forming the gate electrode includes forming a plating base film, forming a protection layer of the plating base film, forming a photoresist layer on the protection layer to expose the photoresist layer with desired patterning light, causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered corresponding to the patterning light, and after depositing a metal on the uncovered plating base film, causing an electroless plating solution to come into contact with the plating base film to perform electroless plating.

Transistor manufacturing method

Provided is a compound represented by Formula (1). 

Provided is a compound which is excellent terms of stability and tight adhesion to substrates and on which wiring can be formed by electroless plating. The compound is a high-molecular-weight compound having a constituent unit represented by the following formula (1). [In formula (1), R1 represents a hydrogen atom or a methyl group, m is an integer of 2-20, and Q represents a photosensitive leaving group].

Polymer compound, surface treatment agent, laminated body using surface treatment agent, transistor, method for manufacturing laminated body

A method of manufacturing a laminate, transistor, and method of manufacturing transistor using a composition that includes an organic compound having a hydroxy group; a first cross-linking agent that is at least one organic silicon compound selected from the group including an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and a photocationic polymerization initiator.

Composition, laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor

Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): 

Disclosed is a fluorine-containing composition containing a fluorine-containing compound represented by general formula (1) and a fluorine-based solvent. 

Fluorine-containing composition, substrate for pattern formation, photodegradable coupling agent, pattern formation method and transistor production method

A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the precursor film, exposing the photoresist layer with a desired pattern of light, exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer, removing a deprotected protecting group, and depositing an electroless plating catalyst on the exposed surface of the plating base film.

Wiring pattern production method and transistor production method

A wiring pattern manufacturing method includes: applying a liquid body including a first formation material on a substrate to form a base film; applying a liquid body including a second formation material on at least part of a surface of the base film to form a protection layer of the base film; forming a resist layer on a surface of the protection layer to expose the resist layer with desired patterning light; causing the exposed resist layer to come into contact with a developer to remove the resist layer and the protection layer until the base film is uncovered corresponding to the patterning light; and after depositing a catalyst on a surface of the uncovered base film, causing an electroless plating solution to come into contact with the surface of the base film to perform electroless plating.

Wiring pattern manufacturing method and transistor manufacturing method

A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.

Growing community of inventors

Yokohama, Japan

Yusuke Kawakami