Panasonic Intellectual Property Management Co., Ltd.

Yusuke Katagiri

Manabu Yanagihara

Takeshi Kawabata

Katsumi Otani

Hidekazu Nakamura

Tomohiko Nakamura

A semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an InGaAlN layer in contact with a surface of the silicon substrate, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1; and a die pad including Cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. A thickness of the nitride semiconductor chip is at least 0.2 mm, length L of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length L of the nitride semiconductor chip satisfy tm≥2.00×10×L+0.173, tm being a thickness in mm and L being a length in mm.

Semiconductor device and method for manufacturing the same

A semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an InGaAlN layer in contact with a surface of the silicon substrate, where 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1; and a die pad including Cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. A thickness of the nitride semiconductor chip is at least 0.2 mm, length L of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length L of the nitride semiconductor chip satisfy tm&#x2265;2.00&#xd7;10&#xd7;L+0.173, tm being a thickness in mm and L being a length in mm.

Growing community of inventors

Kyoto, Japan

Yusuke Katagiri